页 1424 - 二极管 - 整流器 - 单 | 分立半导体产品

零件编号	制造商	描述	封装	库存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
MSG106	Microsemi Corporation	DIODE SCHOTTKY 60V 1A DO204AL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 690mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 60V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	封装: DO-204AL, DO-41, Axial	库存4,976	60V	1A	690mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 60V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
D471N90T	Infineon Technologies Industrial Power and Controls Americas	DIODE RECTIFIER 9000V 550A Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	库存4,112	-	-	-	-	-	-	-	-	-	-	-
R7221008ESOO	Powerex Inc.	DIODE MODULE 1KV 800A DO200AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 800A Voltage - Forward (Vf) (Max) @ If: 1.65V @ 1500A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 50mA @ 1000V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AB, B-PUK Supplier Device Package: DO-200AB, B-PUK Operating Temperature - Junction: -	封装: DO-200AB, B-PUK	库存2,768	1000V	800A	1.65V @ 1500A	Standard Recovery >500ns, > 200mA (Io)	2µs	50mA @ 1000V	-	Chassis Mount	DO-200AB, B-PUK	DO-200AB, B-PUK	-
VS-1N3209R	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 15A DO203AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10mA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB Operating Temperature - Junction: -65°C ~ 175°C	封装: DO-203AB, DO-5, Stud	库存2,608	100V	15A	1.5V @ 15A	Standard Recovery >500ns, > 200mA (Io)	-	10mA @ 100V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB	-65°C ~ 175°C
QH12BZ600	Power Integrations	DIODE GEN PURP 600V 12A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 3.1V @ 12A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 11.6ns Current - Reverse Leakage @ Vr: 250µA @ 600V Capacitance @ Vr, F: 34pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -55°C ~ 150°C	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存5,296	600V	12A	3.1V @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	11.6ns	250µA @ 600V	34pF @ 10V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-55°C ~ 150°C
FESB16FT-E3/81	Vishay Semiconductor Diodes Division	DIODE GEN PURP 300V 16A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 10µA @ 300V Capacitance @ Vr, F: 175pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -65°C ~ 150°C	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存6,656	300V	16A	1.3V @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 300V	175pF @ 4V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-65°C ~ 150°C
MS106E3/TR8	Microsemi Corporation	DIODE SCHOTTKY 60V 1A DO204AL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 690mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 60V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 175°C	封装: DO-204AL, DO-41, Axial	库存5,280	60V	1A	690mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 60V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 175°C
NGTD9R120F2WP	ON Semiconductor	DIODE GEN PURP 1.2KV DIE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: 2.6V @ 15A Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die Operating Temperature - Junction: 175°C (Max)	封装: Die	库存3,856	1200V	-	2.6V @ 15A	-	-	1µA @ 1200V	-	Surface Mount	Die	Die	175°C (Max)
NTS12100MFST3G	ON Semiconductor	DIODE SCHOTTKY 100V 12A 5DFN Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 730mV @ 12A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 55µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Supplier Device Package: 5-DFN (5x6) (8-SOFL) Operating Temperature - Junction: -55°C ~ 150°C	封装: 8-PowerTDFN, 5 Leads	库存2,048	100V	12A	730mV @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	-	55µA @ 100V	-	Surface Mount	8-PowerTDFN, 5 Leads	5-DFN (5x6) (8-SOFL)	-55°C ~ 150°C
RU 1V1	Sanken	DIODE GEN PURP 400V 250MA AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 250mA Voltage - Forward (Vf) (Max) @ If: 2.5V @ 250mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	封装: Axial	库存7,696	400V	250mA	2.5V @ 250mA	Fast Recovery =< 500ns, > 200mA (Io)	400ns	10µA @ 400V	-	Through Hole	Axial	-	-40°C ~ 150°C
SS36LHRTG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 3A, 6 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 750mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-219AB	库存4,032	60V	3A	750mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SA2K-E3/61T	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 2A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5µs Current - Reverse Leakage @ Vr: 3µA @ 800V Capacitance @ Vr, F: 11pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-214AC, SMA	库存885,600	800V	2A	1.1V @ 2A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	3µA @ 800V	11pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
RL103TA	SMC Diode Solutions	DIODE GEN PURP 200V 1A A-405 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: A-405 Operating Temperature - Junction: -65°C ~ 175°C	封装: Axial	库存6,304	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 200V	15pF @ 4V, 1MHz	Through Hole	Axial	A-405	-65°C ~ 175°C
RGP25M-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 2.5A DO201 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 2.5A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C	封装: DO-201AD, Axial	库存6,464	1000V	2.5A	1.3V @ 2.5A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	60pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 175°C
BAS19-TP	Micro Commercial Co	DIODE GEN PURP 100V 200MA SOT23 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 100nA @ 100V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23 Operating Temperature - Junction: -65°C ~ 150°C	封装: TO-236-3, SC-59, SOT-23-3	库存35,880	100V	200mA (DC)	1.25V @ 200mA	Small Signal =< 200mA (Io), Any Speed	50ns	100nA @ 100V	5pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23	-65°C ~ 150°C
AL01ZV1	Sanken	DIODE GEN PURP 200V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 980mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 50µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: Axial Operating Temperature - Junction: -40°C ~ 150°C	封装: Axial	库存6,000	200V	1A	980mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	50µA @ 200V	-	Through Hole	Axial	Axial	-40°C ~ 150°C
SBRT3U60SA-13	Diodes Incorporated	DIODE SBR 60V 3A SMA Diode Type: Super Barrier Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 560mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-214AC, SMA	库存6,016	60V	3A	560mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Surface Mount	DO-214AC, SMA	SMA	-55°C ~ 150°C
S1B	Fairchild/ON Semiconductor	DIODE GEN PURP 100V 1A SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8µs Current - Reverse Leakage @ Vr: 1µA @ 100V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA (DO-214AC) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-214AC, SMA	库存2,373,540	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	1µA @ 100V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA (DO-214AC)	-55°C ~ 150°C
RB531VM-30FHTE-17	Rohm Semiconductor	DIODE SCHOTTKY 30V 100MA UMD2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 490 mV @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 45 µA @ 30 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: UMD2 Operating Temperature - Junction: 125°C (Max)	封装: -	Request a Quote	30 V	100mA	490 mV @ 100 mA	Small Signal =< 200mA (Io), Any Speed	-	45 µA @ 30 V	-	Surface Mount	SC-90, SOD-323F	UMD2	125°C (Max)
RFUH20TF6SC9	Rohm Semiconductor	DIODE GEN PURP 600V 20A TO220NFM Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220NFM Operating Temperature - Junction: 150°C	封装: -	库存2,895	600 V	20A	2.8 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 600 V	-	Through Hole	TO-220-2 Full Pack	TO-220NFM	150°C
85HFR60	Solid State Inc.	DIODE GEN PURP 600V 85A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 85A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 85 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 150°C	封装: -	Request a Quote	600 V	85A	1.3 V @ 85 A	Standard Recovery >500ns, > 200mA (Io)	-	200 µA @ 600 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 150°C
JANTXV1N5554US-TR	Microchip Technology	DIODE GEN PURP 1KV 3A D-5B Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Current - Reverse Leakage @ Vr: 1 µA @ 1 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, E Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	1000 V	3A	1.3 V @ 9 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	1 µA @ 1 V	-	Surface Mount	SQ-MELF, E	D-5B	-65°C ~ 175°C
CSIC10-1200	Central Semiconductor Corp	DIODE SIL CARB 1.2KV 10A TO220-2 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 250 µA @ 1200 V Capacitance @ Vr, F: 500pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C	封装: -	Request a Quote	1200 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	250 µA @ 1200 V	500pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220-2	-55°C ~ 175°C
S2190	Microchip Technology	STD RECTIFIER Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
DSEI25-06AS-TRL	IXYS	DIODE GEN PURP 600V 25A TO263 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 25 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 100 µA @ 600 V Capacitance @ Vr, F: 20pF @ 400V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (D2PAK) Operating Temperature - Junction: -40°C ~ 150°C	封装: -	Request a Quote	600 V	25A	1.31 V @ 25 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	100 µA @ 600 V	20pF @ 400V, 1MHz	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263 (D2PAK)	-40°C ~ 150°C
10A06GP-TP	Micro Commercial Co	Interface Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 800 V Capacitance @ Vr, F: 150pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: R-6, Axial Supplier Device Package: R-6 Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	800 V	10A	1.2 V @ 10 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 800 V	150pF @ 4V, 1MHz	Through Hole	R-6, Axial	R-6	-55°C ~ 150°C
BAT54TQ-7-F	Diodes Incorporated	DIODE SCHOTTKY 30V 200MA SOT523 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2 µA @ 25 V Capacitance @ Vr, F: 10pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SOT-523 Supplier Device Package: SOT-523 Operating Temperature - Junction: -65°C ~ 150°C	封装: -	库存9,000	30 V	200mA	1 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	-	2 µA @ 25 V	10pF @ 10V, 1MHz	Surface Mount	SOT-523	SOT-523	-65°C ~ 150°C
NRVHPAF220T3G	onsemi	PUF 2A 200V IN SMAFL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Current - Reverse Leakage @ Vr: 500 nA @ 200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: SMA-FL Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	200 V	2A	1 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	500 nA @ 200 V	-	Surface Mount	DO-221AC, SMA Flat Leads	SMA-FL	-65°C ~ 175°C
HER604GP-TP	Micro Commercial Co	DIODE GEN PURP 300V 6A R-6 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 10 µA @ 300 V Capacitance @ Vr, F: 100pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: R-6, Axial Supplier Device Package: R-6 Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	300 V	6A	1.1 V @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 300 V	100pF @ 4V, 1MHz	Through Hole	R-6, Axial	R-6	-55°C ~ 150°C
RS3JC-HF	Comchip Technology	DIODE GEN PURP 600V 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	600 V	3A	1.3 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	5 µA @ 600 V	40pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C

MSG106

Microsemi Corporation

DIODE SCHOTTKY 60V 1A DO204AL

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 690mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-204AL, DO-41, Axial

库存4,976

60V

1A

690mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 60V

-

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 175°C

D471N90T

Infineon Technologies Industrial Power and Controls Americas

DIODE RECTIFIER 9000V 550A

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

库存4,112

-

R7221008ESOO

Powerex Inc.

DIODE MODULE 1KV 800A DO200AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 800A
Voltage - Forward (Vf) (Max) @ If: 1.65V @ 1500A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 50mA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: DO-200AB, B-PUK
Supplier Device Package: DO-200AB, B-PUK
Operating Temperature - Junction: -

封装: DO-200AB, B-PUK

库存2,768

1000V

800A

1.65V @ 1500A

Standard Recovery >500ns, > 200mA (Io)

2µs

50mA @ 1000V

-

Chassis Mount

DO-200AB, B-PUK

-

VS-1N3209R

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 15A DO203AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10mA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB
Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-203AB, DO-5, Stud

库存2,608

100V

15A

1.5V @ 15A

Standard Recovery >500ns, > 200mA (Io)

-

10mA @ 100V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-203AB

-65°C ~ 175°C

QH12BZ600

Power Integrations

DIODE GEN PURP 600V 12A TO263AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 3.1V @ 12A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 11.6ns
Current - Reverse Leakage @ Vr: 250µA @ 600V
Capacitance @ Vr, F: 34pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -55°C ~ 150°C

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存5,296

600V

12A

3.1V @ 12A

Fast Recovery =< 500ns, > 200mA (Io)

11.6ns

250µA @ 600V

34pF @ 10V, 1MHz

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB

-55°C ~ 150°C

FESB16FT-E3/81

Vishay Semiconductor Diodes Division

DIODE GEN PURP 300V 16A TO263AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 16A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 10µA @ 300V
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 150°C

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存6,656

300V

16A

1.3V @ 16A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

10µA @ 300V

175pF @ 4V, 1MHz

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB

-65°C ~ 150°C

MS106E3/TR8

Microsemi Corporation

DIODE SCHOTTKY 60V 1A DO204AL

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 690mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 175°C

封装: DO-204AL, DO-41, Axial

库存5,280

60V

1A

690mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 60V

-

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 175°C

NGTD9R120F2WP

ON Semiconductor

DIODE GEN PURP 1.2KV DIE

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: 2.6V @ 15A
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Operating Temperature - Junction: 175°C (Max)

封装: Die

库存3,856

1200V

-

2.6V @ 15A

-

1µA @ 1200V

-

Surface Mount

Die

175°C (Max)

NTS12100MFST3G

ON Semiconductor

DIODE SCHOTTKY 100V 12A 5DFN

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 730mV @ 12A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 55µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 150°C

封装: 8-PowerTDFN, 5 Leads

库存2,048

100V

12A

730mV @ 12A

Fast Recovery =< 500ns, > 200mA (Io)

-

55µA @ 100V

-

Surface Mount

8-PowerTDFN, 5 Leads

5-DFN (5x6) (8-SOFL)

-55°C ~ 150°C

RU 1V1

Sanken

DIODE GEN PURP 400V 250MA AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 250mA
Voltage - Forward (Vf) (Max) @ If: 2.5V @ 250mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 150°C

封装: Axial

库存7,696

400V

250mA

2.5V @ 250mA

Fast Recovery =< 500ns, > 200mA (Io)

400ns

10µA @ 400V

-

Through Hole

Axial

-

-40°C ~ 150°C

SS36LHRTG

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 3A, 6

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 750mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-219AB

库存4,032

60V

3A

750mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 60V

-

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

SA2K-E3/61T

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 2A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5µs
Current - Reverse Leakage @ Vr: 3µA @ 800V
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-214AC, SMA

库存885,600

800V

2A

1.1V @ 2A

Standard Recovery >500ns, > 200mA (Io)

1.5µs

3µA @ 800V

11pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

RL103TA

SMC Diode Solutions

DIODE GEN PURP 200V 1A A-405

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: A-405
Operating Temperature - Junction: -65°C ~ 175°C

封装: Axial

库存6,304

200V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 200V

15pF @ 4V, 1MHz

Through Hole

Axial

A-405

-65°C ~ 175°C

RGP25M-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 2.5A DO201

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 2.5A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-201AD, Axial

库存6,464

1000V

2.5A

1.3V @ 2.5A

Fast Recovery =< 500ns, > 200mA (Io)

500ns

5µA @ 1000V

60pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-65°C ~ 175°C

BAS19-TP

Micro Commercial Co

DIODE GEN PURP 100V 200MA SOT23

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 100nA @ 100V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Operating Temperature - Junction: -65°C ~ 150°C

封装: TO-236-3, SC-59, SOT-23-3

库存35,880

100V

200mA (DC)

1.25V @ 200mA

Small Signal =< 200mA (Io), Any Speed

50ns

100nA @ 100V

5pF @ 0V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

-65°C ~ 150°C

AL01ZV1

Sanken

DIODE GEN PURP 200V 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 980mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 50µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: Axial
Operating Temperature - Junction: -40°C ~ 150°C

封装: Axial

库存6,000

200V

1A

980mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

50µA @ 200V

-

Through Hole

Axial

-40°C ~ 150°C

SBRT3U60SA-13

Diodes Incorporated

DIODE SBR 60V 3A SMA

Diode Type: Super Barrier
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 560mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-214AC, SMA

库存6,016

60V

3A

560mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 60V

-

Surface Mount

DO-214AC, SMA

SMA

-55°C ~ 150°C

S1B

Fairchild/ON Semiconductor

DIODE GEN PURP 100V 1A SMA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8µs
Current - Reverse Leakage @ Vr: 1µA @ 100V
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA (DO-214AC)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-214AC, SMA

库存2,373,540

100V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

1.8µs

1µA @ 100V

12pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

SMA (DO-214AC)

-55°C ~ 150°C

RB531VM-30FHTE-17

Rohm Semiconductor

DIODE SCHOTTKY 30V 100MA UMD2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 100 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 45 µA @ 30 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Supplier Device Package: UMD2
Operating Temperature - Junction: 125°C (Max)

封装: -

Request a Quote

30 V

100mA

490 mV @ 100 mA

Small Signal =< 200mA (Io), Any Speed

-

45 µA @ 30 V

-

Surface Mount

SC-90, SOD-323F

UMD2

125°C (Max)

RFUH20TF6SC9

Rohm Semiconductor

DIODE GEN PURP 600V 20A TO220NFM

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 20 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: TO-220NFM
Operating Temperature - Junction: 150°C

封装: -

库存2,895

600 V

20A

2.8 V @ 20 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

10 µA @ 600 V

-

Through Hole

TO-220-2 Full Pack

TO-220NFM

150°C

85HFR60

Solid State Inc.

DIODE GEN PURP 600V 85A DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 85A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 85 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C

封装: -

Request a Quote

600 V

85A

1.3 V @ 85 A

Standard Recovery >500ns, > 200mA (Io)

-

200 µA @ 600 V

-

Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 150°C

JANTXV1N5554US-TR

Microchip Technology

DIODE GEN PURP 1KV 3A D-5B

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

Request a Quote

1000 V

3A

1.3 V @ 9 A

Standard Recovery >500ns, > 200mA (Io)

2 µs

1 µA @ 1 V

-

Surface Mount

SQ-MELF, E

D-5B

-65°C ~ 175°C

CSIC10-1200

Central Semiconductor Corp

DIODE SIL CARB 1.2KV 10A TO220-2

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Capacitance @ Vr, F: 500pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

Request a Quote

1200 V

10A

1.7 V @ 10 A

No Recovery Time > 500mA (Io)

0 ns

250 µA @ 1200 V

500pF @ 1V, 1MHz

Through Hole

TO-220-2

-55°C ~ 175°C

S2190

Microchip Technology

STD RECTIFIER

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

Request a Quote

-

DSEI25-06AS-TRL

IXYS

DIODE GEN PURP 600V 25A TO263

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 25 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Capacitance @ Vr, F: 20pF @ 400V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C

封装: -

Request a Quote

600 V

25A

1.31 V @ 25 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

100 µA @ 600 V

20pF @ 400V, 1MHz

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

TO-263 (D2PAK)

-40°C ~ 150°C

10A06GP-TP

Micro Commercial Co

Interface

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: R-6, Axial
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

800 V

10A

1.2 V @ 10 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 800 V

150pF @ 4V, 1MHz

Through Hole

R-6, Axial

R-6

-55°C ~ 150°C

BAT54TQ-7-F

Diodes Incorporated

DIODE SCHOTTKY 30V 200MA SOT523

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOT-523
Supplier Device Package: SOT-523
Operating Temperature - Junction: -65°C ~ 150°C

封装: -

库存9,000

30 V

200mA

1 V @ 100 mA

Small Signal =< 200mA (Io), Any Speed

-

2 µA @ 25 V

10pF @ 10V, 1MHz

Surface Mount

SOT-523

-65°C ~ 150°C

NRVHPAF220T3G

onsemi

PUF 2A 200V IN SMAFL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: SMA-FL
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

Request a Quote

200 V

2A

1 V @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

30 ns

500 nA @ 200 V

-

Surface Mount

DO-221AC, SMA Flat Leads

SMA-FL

-65°C ~ 175°C

HER604GP-TP

Micro Commercial Co

DIODE GEN PURP 300V 6A R-6

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300 V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: R-6, Axial
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

300 V

6A

1.1 V @ 6 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

10 µA @ 300 V

100pF @ 4V, 1MHz

Through Hole

R-6, Axial

R-6

-55°C ~ 150°C

RS3JC-HF

Comchip Technology

DIODE GEN PURP 600V 3A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

600 V

3A

1.3 V @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

250 ns

5 µA @ 600 V

40pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 150°C