页 1412 - 二极管 - 整流器 - 单 | 分立半导体产品

零件编号	制造商	描述	封装	库存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
GP10KE-M3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURPOSE DO204AL Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	库存2,784	-	-	-	-	-	-	-	-	-	-	-
JANTXV1N3766	Microsemi Corporation	DIODE GEN PURP 800V 35A DO203AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 800V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 175°C	封装: DO-203AB, DO-5, Stud	库存4,496	800V	35A	1.4V @ 110A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 800V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 175°C
GP10WHM3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.5KV 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1500V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 5µA @ 1500V Capacitance @ Vr, F: 5pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 150°C	封装: DO-204AL, DO-41, Axial	库存3,648	1500V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	3µs	5µA @ 1500V	5pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 150°C
R9G02022XX	Powerex Inc.	DIODE MODULE 2KV 2200A DO200AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2000V Current - Average Rectified (Io): 2200A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1500A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 15µs Current - Reverse Leakage @ Vr: 150mA @ 2000V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AB, B-PUK Supplier Device Package: DO-200AB, B-PUK Operating Temperature - Junction: -	封装: DO-200AB, B-PUK	库存4,720	2000V	2200A	1.1V @ 1500A	Standard Recovery >500ns, > 200mA (Io)	15µs	150mA @ 2000V	-	Chassis Mount	DO-200AB, B-PUK	DO-200AB, B-PUK	-
VS-VSKE250-08PBF	Vishay Semiconductor Diodes Division	DIODE GEN 800V 250A MAGNAPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 250A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50mA @ 800V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: MAGN-A-PAK (3) Supplier Device Package: MAGN-A-PAK? Operating Temperature - Junction: -40°C ~ 150°C	封装: MAGN-A-PAK (3)	库存2,512	800V	250A	-	Standard Recovery >500ns, > 200mA (Io)	-	50mA @ 800V	-	Chassis Mount	MAGN-A-PAK (3)	MAGN-A-PAK?	-40°C ~ 150°C
VS-SD200N16PC	Vishay Semiconductor Diodes Division	DIODE STD REC 200A 1600V DO205AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600V Current - Average Rectified (Io): 200A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 630A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AC, DO-30, Stud Supplier Device Package: DO-205AC (DO-30) Operating Temperature - Junction: -40°C ~ 180°C	封装: DO-205AC, DO-30, Stud	库存2,928	1600V	200A	1.4V @ 630A	Fast Recovery =< 500ns, > 200mA (Io)	-	-	-	Chassis, Stud Mount	DO-205AC, DO-30, Stud	DO-205AC (DO-30)	-40°C ~ 180°C
RS3JHE3_A/H	Vishay Semiconductor Diodes Division	DIODE FAST REC 600V 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: 34pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-214AB, SMC	库存3,280	600V	3A	1.3V @ 2.5A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	10µA @ 600V	34pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 150°C
BYG22BHE3_A/I	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 100V 2A SMA Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 1µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-214AC, SMA	库存5,664	100V	2A	1.1V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 100V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
1N5820-E3/73	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 20V 3A DO201AD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 475mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2mA @ 20V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 125°C	封装: DO-201AD, Axial	库存7,856	20V	3A	475mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	2mA @ 20V	-	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 125°C
BAT54S RFG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 0.2A, Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 2µA @ 25V Capacitance @ Vr, F: 10pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23 Operating Temperature - Junction: -55°C ~ 125°C	封装: TO-236-3, SC-59, SOT-23-3	库存5,328	30V	200mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	5ns	2µA @ 25V	10pF @ 1V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23	-55°C ~ 125°C
1N4725	Microsemi Corporation	DIODE GEN PURP 1KV 3A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 25µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	封装: Axial	库存7,032	1000V	3A	1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	25µA @ 1000V	-	Through Hole	Axial	-	-65°C ~ 175°C
DFLS220L-7	Diodes Incorporated	DIODE SCHOTTKY 20V 2A POWERDI123 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 420mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 20V Capacitance @ Vr, F: 75pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: POWERDI?123 Supplier Device Package: PowerDI? 123 Operating Temperature - Junction: -55°C ~ 125°C	封装: POWERDI?123	库存1,699,176	20V	2A	420mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 20V	75pF @ 10V, 1MHz	Surface Mount	POWERDI?123	PowerDI? 123	-55°C ~ 125°C
V12PM6-M3-I	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 60V 12A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 640 mV @ 12 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 mA @ 60 V Capacitance @ Vr, F: 2050pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 175°C	封装: -	Request a Quote	60 V	12A	640 mV @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 60 V	2050pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-40°C ~ 175°C
1N4385-BK-TIN-LEAD	Central Semiconductor Corp	DIODE GEN PURP 600V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 10 µs Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 200°C	封装: -	Request a Quote	600 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	10 µs	10 µA @ 600 V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 200°C
85HFR40	Solid State Inc.	DIODE GEN PURP 400V 85A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 85A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 85 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 150°C	封装: -	Request a Quote	400 V	85A	1.3 V @ 85 A	Standard Recovery >500ns, > 200mA (Io)	-	200 µA @ 400 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 150°C
BA158-AP	Micro Commercial Co	DIODE GEN PURP 600V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 125°C	封装: -	Request a Quote	600 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	5 µA @ 600 V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 125°C
V5NM103-M3-H	Vishay	5A, 100V, DFN3820A TRENCH SKY RE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 140 µA @ 100 V Capacitance @ Vr, F: 580pF @ 4V, 1MHz Mounting Type: Surface Mount, Wettable Flank Package / Case: 2-VDFN Supplier Device Package: DFN3820A Operating Temperature - Junction: -40°C ~ 175°C	封装: -	Request a Quote	100 V	5A	720 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	140 µA @ 100 V	580pF @ 4V, 1MHz	Surface Mount, Wettable Flank	2-VDFN	DFN3820A	-40°C ~ 175°C
EGL41DHE3_A-I	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 200V 1A DO213AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF (Glass) Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	200 V	1A	1 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 200 V	20pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF (Glass)	DO-213AB	-65°C ~ 175°C
EGF1B-1HE3-67A	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 100V 1A DO214BA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 100 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214BA Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	100 V	1A	1 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 100 V	15pF @ 4V, 1MHz	Surface Mount	DO-214BA	DO-214BA (GF1)	-65°C ~ 175°C
MUR140GP-AP	Micro Commercial Co	DIODE GEN PURP 400V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C	封装: -	Request a Quote	400 V	1A	1.35 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	45 ns	5 µA @ 400 V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 150°C
SS1060HE_R1_00001	Panjit International Inc.	DIODE SCHOTTKY 60V 1A SOD123HE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 30 µA @ 60 V Capacitance @ Vr, F: 125pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123H Supplier Device Package: SOD-123HE Operating Temperature - Junction: -55°C ~ 150°C	封装: -	库存8,640	60 V	1A	700 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	30 µA @ 60 V	125pF @ 0V, 1MHz	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
ES2LJ	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 2A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	库存18,000	600 V	2A	1.7 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 600 V	20pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
R36110	Microchip Technology	STD RECTIFIER Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
SK2545YD2-3G	Diotec Semiconductor	DIODE SCHOTTKY 45V 25A TO263AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 560 mV @ 25 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 45 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -50°C ~ 150°C	封装: -	Request a Quote	45 V	25A	560 mV @ 25 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 45 V	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-50°C ~ 150°C
CUS10I30A-TE85L-QM	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 1A US-FLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 390 mV @ 700 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 60 µA @ 30 V Capacitance @ Vr, F: 50pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: US-FLAT (1.25x2.5) Operating Temperature - Junction: 150°C (Max)	封装: -	Request a Quote	30 V	1A	390 mV @ 700 mA	Fast Recovery =< 500ns, > 200mA (Io)	-	60 µA @ 30 V	50pF @ 10V, 1MHz	Surface Mount	SC-76, SOD-323	US-FLAT (1.25x2.5)	150°C (Max)
NRVUA160VT3G-GA01	onsemi	DIODE GEN PURP 600V 2A SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	600 V	2A	1.25 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	5 µA @ 600 V	-	Surface Mount	DO-214AC, SMA	SMA	-65°C ~ 175°C
B340B-13-F-2477	Diodes Incorporated	DIODE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150 µA @ 40 V Capacitance @ Vr, F: 200pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -55°C ~ 125°C	封装: -	Request a Quote	40 V	3A	500 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	150 µA @ 40 V	200pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB	-55°C ~ 125°C
S3JC-HF	Comchip Technology	DIODE GEN PURP 600V 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	600 V	3A	1 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 600 V	40pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SDS065J012S3-ISARH	Luminus Devices Inc.	DIODE 650V-12A DFN8*8-4L Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 44A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 12 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 36 µA @ 650 V Capacitance @ Vr, F: 651pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 4-PowerVSFN Supplier Device Package: 4-DFN (8x8) Operating Temperature - Junction: -55°C ~ 175°C	封装: -	Request a Quote	650 V	44A	1.5 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	36 µA @ 650 V	651pF @ 0V, 1MHz	Surface Mount	4-PowerVSFN	4-DFN (8x8)	-55°C ~ 175°C
UF5407GP-AP	Micro Commercial Co	DIODE GEN PURP 800V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 10 µA @ 800 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	800 V	3A	1.7 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	10 µA @ 800 V	50pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C

GP10KE-M3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURPOSE DO204AL

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

库存2,784

-

JANTXV1N3766

Microsemi Corporation

DIODE GEN PURP 800V 35A DO203AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-203AB, DO-5, Stud

库存4,496

800V

35A

1.4V @ 110A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 800V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 175°C

GP10WHM3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.5KV 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1500V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 5µA @ 1500V
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C

封装: DO-204AL, DO-41, Axial

库存3,648

1500V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

3µs

5µA @ 1500V

5pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 150°C

R9G02022XX

Powerex Inc.

DIODE MODULE 2KV 2200A DO200AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 2000V
Current - Average Rectified (Io): 2200A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1500A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15µs
Current - Reverse Leakage @ Vr: 150mA @ 2000V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: DO-200AB, B-PUK
Supplier Device Package: DO-200AB, B-PUK
Operating Temperature - Junction: -

封装: DO-200AB, B-PUK

库存4,720

2000V

2200A

1.1V @ 1500A

Standard Recovery >500ns, > 200mA (Io)

15µs

150mA @ 2000V

-

Chassis Mount

DO-200AB, B-PUK

-

VS-VSKE250-08PBF

Vishay Semiconductor Diodes Division

DIODE GEN 800V 250A MAGNAPAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 250A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50mA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: MAGN-A-PAK (3)
Supplier Device Package: MAGN-A-PAK?
Operating Temperature - Junction: -40°C ~ 150°C

封装: MAGN-A-PAK (3)

库存2,512

800V

250A

-

Standard Recovery >500ns, > 200mA (Io)

-

50mA @ 800V

-

Chassis Mount

MAGN-A-PAK (3)

MAGN-A-PAK?

-40°C ~ 150°C

VS-SD200N16PC

Vishay Semiconductor Diodes Division

DIODE STD REC 200A 1600V DO205AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io): 200A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 630A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AC, DO-30, Stud
Supplier Device Package: DO-205AC (DO-30)
Operating Temperature - Junction: -40°C ~ 180°C

封装: DO-205AC, DO-30, Stud

库存2,928

1600V

200A

1.4V @ 630A

Fast Recovery =< 500ns, > 200mA (Io)

-

Chassis, Stud Mount

DO-205AC, DO-30, Stud

DO-205AC (DO-30)

-40°C ~ 180°C

RS3JHE3_A/H

Vishay Semiconductor Diodes Division

DIODE FAST REC 600V 3A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250ns
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: 34pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-214AB, SMC

库存3,280

600V

3A

1.3V @ 2.5A

Fast Recovery =< 500ns, > 200mA (Io)

250ns

10µA @ 600V

34pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-55°C ~ 150°C

BYG22BHE3_A/I

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 100V 2A SMA

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 1µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-214AC, SMA

库存5,664

100V

2A

1.1V @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

1µA @ 100V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

1N5820-E3/73

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20V 3A DO201AD

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 475mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2mA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 125°C

封装: DO-201AD, Axial

库存7,856

20V

3A

475mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

2mA @ 20V

-

Through Hole

DO-201AD, Axial

DO-201AD

-65°C ~ 125°C

BAT54S RFG

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 0.2A,

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5ns
Current - Reverse Leakage @ Vr: 2µA @ 25V
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 125°C

封装: TO-236-3, SC-59, SOT-23-3

库存5,328

30V

200mA

1V @ 100mA

Small Signal =< 200mA (Io), Any Speed

5ns

2µA @ 25V

10pF @ 1V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

-55°C ~ 125°C

1N4725

Microsemi Corporation

DIODE GEN PURP 1KV 3A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 25µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 175°C

封装: Axial

库存7,032

1000V

3A

1V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

25µA @ 1000V

-

Through Hole

Axial

-

-65°C ~ 175°C

DFLS220L-7

Diodes Incorporated

DIODE SCHOTTKY 20V 2A POWERDI123

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 420mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 20V
Capacitance @ Vr, F: 75pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: POWERDI?123
Supplier Device Package: PowerDI? 123
Operating Temperature - Junction: -55°C ~ 125°C

封装: POWERDI?123

库存1,699,176

20V

2A

420mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 20V

75pF @ 10V, 1MHz

Surface Mount

POWERDI?123

PowerDI? 123

-55°C ~ 125°C

V12PM6-M3-I

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 60V 12A TO277A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 12 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
Capacitance @ Vr, F: 2050pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 175°C

封装: -

Request a Quote

60 V

12A

640 mV @ 12 A

Fast Recovery =< 500ns, > 200mA (Io)

-

1 mA @ 60 V

2050pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-40°C ~ 175°C

1N4385-BK-TIN-LEAD

Central Semiconductor Corp

DIODE GEN PURP 600V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 µs
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 200°C

封装: -

Request a Quote

600 V

1A

1.1 V @ 1 A

Standard Recovery >500ns, > 200mA (Io)

10 µs

10 µA @ 600 V

-

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 200°C

85HFR40

Solid State Inc.

DIODE GEN PURP 400V 85A DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 85A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 85 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200 µA @ 400 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C

封装: -

Request a Quote

400 V

85A

1.3 V @ 85 A

Standard Recovery >500ns, > 200mA (Io)

-

200 µA @ 400 V

-

Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 150°C

BA158-AP

Micro Commercial Co

DIODE GEN PURP 600V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 125°C

封装: -

Request a Quote

600 V

1A

1.3 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

150 ns

5 µA @ 600 V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 125°C

V5NM103-M3-H

Vishay

5A, 100V, DFN3820A TRENCH SKY RE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 140 µA @ 100 V
Capacitance @ Vr, F: 580pF @ 4V, 1MHz
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 2-VDFN
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C

封装: -

Request a Quote

100 V

5A

720 mV @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

140 µA @ 100 V

580pF @ 4V, 1MHz

Surface Mount, Wettable Flank

2-VDFN

DFN3820A

-40°C ~ 175°C

EGL41DHE3_A-I

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 200V 1A DO213AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

Request a Quote

200 V

1A

1 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

5 µA @ 200 V

20pF @ 4V, 1MHz

Surface Mount

DO-213AB, MELF (Glass)

DO-213AB

-65°C ~ 175°C

EGF1B-1HE3-67A

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 100V 1A DO214BA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214BA
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

Request a Quote

100 V

1A

1 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

5 µA @ 100 V

15pF @ 4V, 1MHz

Surface Mount

DO-214BA

DO-214BA (GF1)

-65°C ~ 175°C

MUR140GP-AP

Micro Commercial Co

DIODE GEN PURP 400V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C

封装: -

Request a Quote

400 V

1A

1.35 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

45 ns

5 µA @ 400 V

10pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 150°C

SS1060HE_R1_00001

Panjit International Inc.

DIODE SCHOTTKY 60V 1A SOD123HE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 30 µA @ 60 V
Capacitance @ Vr, F: 125pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123H
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

库存8,640

60 V

1A

700 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

30 µA @ 60 V

125pF @ 0V, 1MHz

Surface Mount

SOD-123H

SOD-123HE

-55°C ~ 150°C

ES2LJ

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 2A DO214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

库存18,000

600 V

2A

1.7 V @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

10 µA @ 600 V

20pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

R36110

Microchip Technology

STD RECTIFIER

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

Request a Quote

-

SK2545YD2-3G

Diotec Semiconductor

DIODE SCHOTTKY 45V 25A TO263AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 25 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -50°C ~ 150°C

封装: -

Request a Quote

45 V

25A

560 mV @ 25 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 45 V

-

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

TO-263AB (D2PAK)

-50°C ~ 150°C

CUS10I30A-TE85L-QM

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 1A US-FLAT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 390 mV @ 700 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 60 µA @ 30 V
Capacitance @ Vr, F: 50pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: US-FLAT (1.25x2.5)
Operating Temperature - Junction: 150°C (Max)

封装: -

Request a Quote

30 V

1A

390 mV @ 700 mA

Fast Recovery =< 500ns, > 200mA (Io)

-

60 µA @ 30 V

50pF @ 10V, 1MHz

Surface Mount

SC-76, SOD-323

US-FLAT (1.25x2.5)

150°C (Max)

NRVUA160VT3G-GA01

onsemi

DIODE GEN PURP 600V 2A SMA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

Request a Quote

600 V

2A

1.25 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

75 ns

5 µA @ 600 V

-

Surface Mount

DO-214AC, SMA

SMA

-65°C ~ 175°C

B340B-13-F-2477

Diodes Incorporated

DIODE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 125°C

封装: -

Request a Quote

40 V

3A

500 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

150 µA @ 40 V

200pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

SMB

-55°C ~ 125°C

S3JC-HF

Comchip Technology

DIODE GEN PURP 600V 3A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

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600 V

3A

1 V @ 3 A

Standard Recovery >500ns, > 200mA (Io)

-

5 µA @ 600 V

40pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 150°C

SDS065J012S3-ISARH

Luminus Devices Inc.

DIODE 650V-12A DFN8*8-4L

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 44A
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 12 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 36 µA @ 650 V
Capacitance @ Vr, F: 651pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 4-PowerVSFN
Supplier Device Package: 4-DFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

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650 V

44A

1.5 V @ 12 A

No Recovery Time > 500mA (Io)

0 ns

36 µA @ 650 V

651pF @ 0V, 1MHz

Surface Mount

4-PowerVSFN

4-DFN (8x8)

-55°C ~ 175°C

UF5407GP-AP

Micro Commercial Co

DIODE GEN PURP 800V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

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800 V

3A

1.7 V @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

75 ns

10 µA @ 800 V

50pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C