页 1410 - 二极管 - 整流器 - 单 | 分立半导体产品 | 深圳黑森尔电子
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二极管 - 整流器 - 单

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零件编号
制造商
描述
封装
库存
数量
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
VS-STD170M12MPBF
Vishay Semiconductor Diodes Division

MODULE DIODE 1200V 170A MAGNAPAK

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
封装: -
库存2,640
-
-
-
-
-
-
-
-
-
-
-
VS-VSKE320-08
Vishay Semiconductor Diodes Division

DIODE MODULE 800V MAGN-A-PAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 320A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: MAGN-A-PAK (3)
  • Supplier Device Package: MAGN-A-PAK?
  • Operating Temperature - Junction: -
封装: MAGN-A-PAK (3)
库存3,376
800V
320A
-
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Chassis Mount
MAGN-A-PAK (3)
MAGN-A-PAK?
-
8ETL06S
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 8A D2PAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -65°C ~ 175°C
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存7,648
600V
8A
1.05V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 600V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
-65°C ~ 175°C
BAS216,135
NXP

DIODE GEN PURP 75V 250MA SOD2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 75V
  • Current - Average Rectified (Io): 250mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 1µA @ 75V
  • Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-110
  • Supplier Device Package: SOD110
  • Operating Temperature - Junction: 150°C (Max)
封装: SOD-110
库存5,280
75V
250mA (DC)
1.25V @ 150mA
Fast Recovery =< 500ns, > 200mA (Io)
4ns
1µA @ 75V
1.5pF @ 0V, 1MHz
Surface Mount
SOD-110
SOD110
150°C (Max)
R5030418FSWA
Powerex Inc.

DIODE GEN PURP 400V 175A DO205AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 175A
  • Voltage - Forward (Vf) (Max) @ If: 1.65V @ 470A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5µs
  • Current - Reverse Leakage @ Vr: 45mA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: DO-205AA (DO-8)
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: DO-205AA, DO-8, Stud
库存4,080
400V
175A
1.65V @ 470A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
45mA @ 400V
-
Chassis, Stud Mount
DO-205AA, DO-8, Stud
DO-205AA (DO-8)
-40°C ~ 150°C
JAN1N5190
Microsemi Corporation

DIODE GEN PURP 600V 3A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 400ns
  • Current - Reverse Leakage @ Vr: 2µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: B, Axial
  • Supplier Device Package: Axial
  • Operating Temperature - Junction: -65°C ~ 175°C
封装: B, Axial
库存6,384
600V
3A
1.5V @ 9A
Fast Recovery =< 500ns, > 200mA (Io)
400ns
2µA @ 600V
-
Through Hole
B, Axial
Axial
-65°C ~ 175°C
SRAF1630HC0G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 16A,

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 16A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: ITO-220AC
  • Operating Temperature - Junction: -55°C ~ 125°C
封装: TO-220-2 Full Pack
库存7,856
30V
16A
550mV @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
-
Through Hole
TO-220-2 Full Pack
ITO-220AC
-55°C ~ 125°C
CMSH2-100 BK
Central Semiconductor Corp

DIODE SCHOTTKY 100V 2A SMB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 850mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 100V
  • Capacitance @ Vr, F: 76pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB
  • Operating Temperature - Junction: -65°C ~ 150°C
封装: DO-214AA, SMB
库存7,696
100V
2A
850mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 100V
76pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
SMB
-65°C ~ 150°C
SF33G B0G
TSC America Inc.

DIODE, SUPER FAST, 3A, 150V, 35N

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 5µA @ 150V
  • Capacitance @ Vr, F: 80pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: DO-201AD, Axial
库存5,952
150V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 150V
80pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
HS1A R3G
TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 50V,

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: DO-214AC, SMA
库存5,520
50V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 50V
20pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
hot FML-G22S
Sanken

DIODE GEN PURP 200V 10A TO220F

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 980mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 40ns
  • Current - Reverse Leakage @ Vr: 200µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: TO-220F-2L
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: TO-220-2 Full Pack
库存15,600
200V
10A
980mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
40ns
200µA @ 200V
-
Through Hole
TO-220-2 Full Pack
TO-220F-2L
-40°C ~ 150°C
RK 36V1
Sanken

DIODE SCHOTTKY 60V 2A AXIAL

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 620mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2mA @ 60V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: Axial
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: Axial
库存6,896
60V
2A
620mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
2mA @ 60V
-
Through Hole
Axial
-
-40°C ~ 150°C
ST15100
SMC Diode Solutions

DIODE SCHOTTKY 100V TO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: 750mV @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 100V
  • Capacitance @ Vr, F: 686pF @ 5V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: TO-220-2
库存12,294
100V
-
750mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 100V
686pF @ 5V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
MF300U12F2-BP
Micro Commercial Co

MODULE FRED 300A 1200V SGL F2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 300A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 300A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5mA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: F2 Module
  • Supplier Device Package: F2
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: F2 Module
库存6,816
1200V
300A
1.8V @ 300A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5mA @ 1200V
-
Chassis Mount
F2 Module
F2
-40°C ~ 150°C
CMPSH05-4 TR
Central Semiconductor Corp

DIODE SCHOTTKY 40V 500MA SOT23

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 470mV @ 500mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20µA @ 10V
  • Capacitance @ Vr, F: 50pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
  • Operating Temperature - Junction: -65°C ~ 150°C
封装: TO-236-3, SC-59, SOT-23-3
库存4,832
40V
500mA
470mV @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
-
20µA @ 10V
50pF @ 1V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
-65°C ~ 150°C
hot EGF1C
Fairchild/ON Semiconductor

DIODE GEN PURP 150V 1A SMA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 10µA @ 150V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA (DO-214AC)
  • Operating Temperature - Junction: -65°C ~ 175°C
封装: DO-214AC, SMA
库存111,600
150V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 150V
15pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
SMA (DO-214AC)
-65°C ~ 175°C
V20K170-M3-H
Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 170V 3.2A FLATPAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 170 V
  • Current - Average Rectified (Io): 3.2A
  • Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 170 V
  • Capacitance @ Vr, F: 800pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: FlatPAK (5x6)
  • Operating Temperature - Junction: -40°C ~ 165°C
封装: -
库存9,000
170 V
3.2A
1.02 V @ 20 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 170 V
800pF @ 4V, 1MHz
Surface Mount
8-PowerTDFN
FlatPAK (5x6)
-40°C ~ 165°C
PMEG040V050EPEZ
Nexperia USA Inc.

DIODE SCHOTTKY 40V 5A CFP15B

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 12 ns
  • Current - Reverse Leakage @ Vr: 120 µA @ 40 V
  • Capacitance @ Vr, F: 370pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: CFP15B
  • Operating Temperature - Junction: 175°C
封装: -
库存14,871
40 V
5A
520 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
12 ns
120 µA @ 40 V
370pF @ 1V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
CFP15B
175°C
BAL99W_R1_00001
Panjit International Inc.

DIODE GEN PURP 75V 150MA SOT323

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 75 V
  • Current - Average Rectified (Io): 150mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4 ns
  • Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V
  • Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
Request a Quote
75 V
150mA
1.25 V @ 150 mA
Small Signal =< 200mA (Io), Any Speed
4 ns
2.5 µA @ 75 V
1.5pF @ 0V, 1MHz
Surface Mount
SC-70, SOT-323
SOT-323
-55°C ~ 150°C
BAT60B-TP
Micro Commercial Co

Interface

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 10 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 300 mV @ 10 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 25 µA @ 8 V
  • Capacitance @ Vr, F: 30pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: SOD-323
  • Operating Temperature - Junction: 150°C
封装: -
Request a Quote
10 V
3A
300 mV @ 10 mA
Fast Recovery =< 500ns, > 200mA (Io)
-
25 µA @ 8 V
30pF @ 5V, 1MHz
Surface Mount
SC-76, SOD-323
SOD-323
150°C
RS1KFSHMWG
Taiwan Semiconductor Corporation

DIODE GEN PURP 800V 1A SOD128

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Capacitance @ Vr, F: 7pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: SOD-128
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
库存56,610
800 V
1A
1.3 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
500 ns
5 µA @ 800 V
7pF @ 4V, 1MHz
Surface Mount
SOD-128
SOD-128
-55°C ~ 150°C
JAN1N6911UTK2AS
Microchip Technology

DIODE SCHOTTKY 30V 25A THINKEY2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 540 mV @ 25 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1.2 mA @ 30 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: ThinKey™2
  • Supplier Device Package: ThinKey™2
  • Operating Temperature - Junction: -65°C ~ 150°C
封装: -
Request a Quote
30 V
25A
540 mV @ 25 A
No Recovery Time > 500mA (Io)
-
1.2 mA @ 30 V
-
Surface Mount
ThinKey™2
ThinKey™2
-65°C ~ 150°C
678-3
Microchip Technology

DIODE GEN PURP 300V 25A NC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300 V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: NC
  • Supplier Device Package: NC
  • Operating Temperature - Junction: -65°C ~ 150°C
封装: -
Request a Quote
300 V
25A
1.2 V @ 10 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 100 V
-
Chassis Mount
NC
NC
-65°C ~ 150°C
1N3913R
Microchip Technology

FAST RECOVERY RECTIFIER

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 50 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 200 ns
  • Current - Reverse Leakage @ Vr: 15 µA @ 400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-203AB (DO-5)
  • Operating Temperature - Junction: -65°C ~ 150°C
封装: -
Request a Quote
400 V
50A
1.4 V @ 50 A
Fast Recovery =< 500ns, > 200mA (Io)
200 ns
15 µA @ 400 V
-
Stud Mount
DO-203AB, DO-5, Stud
DO-203AB (DO-5)
-65°C ~ 150°C
CMHD4448-BK-PBFREE
Central Semiconductor Corp

DIODE GEN PURP 75V 250MA SOD123

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 75 V
  • Current - Average Rectified (Io): 250mA
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 4 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 75 V
  • Capacitance @ Vr, F: 4pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
  • Operating Temperature - Junction: -65°C ~ 150°C
封装: -
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75 V
250mA
1 V @ 100 mA
Fast Recovery =< 500ns, > 200mA (Io)
4 ns
5 µA @ 75 V
4pF @ 0V, 1MHz
Surface Mount
SOD-123
SOD-123
-65°C ~ 150°C
SDURB3020
SMC Diode Solutions

DIODE GEN PURP 200V 30A D2PAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 45 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
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200 V
30A
1.2 V @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
45 ns
10 µA @ 200 V
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
D2PAK
-55°C ~ 150°C
US1008FL_R1_00001
Panjit International Inc.

DIODE GEN PURP 800V 1A SOD123FL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 100 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 800 V
  • Capacitance @ Vr, F: 9pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: SOD-123FL
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
库存759
800 V
1A
1.7 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
100 ns
1 µA @ 800 V
9pF @ 4V, 1MHz
Surface Mount
SOD-123F
SOD-123FL
-55°C ~ 150°C
RFN20NS4STL
Rohm Semiconductor

DIODE GEN PURP 430V 20A LPDS

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 430 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 430 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: LPDS
  • Operating Temperature - Junction: 150°C
封装: -
库存2,649
430 V
20A
1.55 V @ 20 A
Fast Recovery =< 500ns, > 200mA (Io)
30 ns
10 µA @ 430 V
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
LPDS
150°C
UES701
Microchip Technology

DIODE GEN PURP 50V 25A DO203AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 25 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 20 µA @ 50 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-203AA (DO-4)
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: -
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50 V
25A
950 mV @ 25 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
20 µA @ 50 V
-
Stud Mount
DO-203AA, DO-4, Stud
DO-203AA (DO-4)
-55°C ~ 175°C
GP2D008A065A
SemiQ

DIODE SIL CARB 650V 8A TO220-2

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 30 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 9 µA @ 650 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2
  • Operating Temperature - Junction: -
封装: -
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650 V
8A
1.45 V @ 30 A
No Recovery Time > 500mA (Io)
0 ns
9 µA @ 650 V
-
Through Hole
TO-220-2
TO-220-2
-