页 1393 - 二极管 - 整流器 - 单 | 分立半导体产品

零件编号	制造商	描述	封装	库存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
DTV32F-E3/45	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.5KV 10A ITO220 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1500V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 6A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 175ns Current - Reverse Leakage @ Vr: 100µA @ 1500V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	封装: TO-220-2 Full Pack, Isolated Tab	库存3,568	1500V	10A	1.5V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	175ns	100µA @ 1500V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	ITO-220AC	-55°C ~ 150°C
SS35HE3/9AT	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 50V 3A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 750mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 50V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-214AB, SMC	库存6,112	50V	3A	750mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 150°C
S5KHE3/9AT	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 5A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.5µs Current - Reverse Leakage @ Vr: 10µA @ 800V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-214AB, SMC	库存4,464	800V	5A	1.15V @ 5A	Standard Recovery >500ns, > 200mA (Io)	2.5µs	10µA @ 800V	40pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 150°C
VSKE270-12	Vishay Semiconductor Diodes Division	DIODE MODULE 1.2KV 270A MAGNAPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 270A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50mA @ 1200V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: 3-MAGN-A-PAK? Supplier Device Package: MAGN-A-PAK? Operating Temperature - Junction: -	封装: 3-MAGN-A-PAK?	库存5,456	1200V	270A	-	Standard Recovery >500ns, > 200mA (Io)	-	50mA @ 1200V	-	Chassis Mount	3-MAGN-A-PAK?	MAGN-A-PAK?	-
JANTXV1N6631US	Microsemi Corporation	DIODE GEN PURP 1.1KV 1.4A D5B Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1100V Current - Average Rectified (Io): 1.4A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1.4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60ns Current - Reverse Leakage @ Vr: 4µA @ 1100V Capacitance @ Vr, F: 40pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, B Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 150°C	封装: SQ-MELF, B	库存5,216	1100V	1.4A	1.6V @ 1.4A	Fast Recovery =< 500ns, > 200mA (Io)	60ns	4µA @ 1100V	40pF @ 10V, 1MHz	Surface Mount	SQ-MELF, B	D-5B	-65°C ~ 150°C
JANTX1N5619US	Microsemi Corporation	DIODE GEN PURP 600V 1A D5A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250ns Current - Reverse Leakage @ Vr: 500nA @ 600V Capacitance @ Vr, F: 25pF @ 12V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 175°C	封装: SQ-MELF, A	库存3,216	600V	1A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	500nA @ 600V	25pF @ 12V, 1MHz	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 175°C
MBR6035	GeneSiC Semiconductor	DIODE SCHOTTKY 35V 60A DO5 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 650mV @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5mA @ 20V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 150°C	封装: DO-203AB, DO-5, Stud	库存6,384	35V	60A	650mV @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	-	5mA @ 20V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 150°C
LSM540G/TR13	Microsemi Corporation	DIODE SCHOTTKY 40V 5A DO215AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 520mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2mA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-215AB, SMC Gull Wing Supplier Device Package: DO-215AB Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-215AB, SMC Gull Wing	库存2,896	40V	5A	520mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	2mA @ 40V	-	Surface Mount	DO-215AB, SMC Gull Wing	DO-215AB	-55°C ~ 150°C
SRA850HC0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 8A, 5 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 700mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 50V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	封装: TO-220-2	库存6,864	50V	8A	700mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SF803G C0G	TSC America Inc.	DIODE, SUPER FAST, 8A, 150V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 975mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 150V Capacitance @ Vr, F: 70pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Operating Temperature - Junction: -55°C ~ 150°C	封装: TO-220-3	库存6,208	150V	8A	975mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 150V	70pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
RU 4Z	Sanken	DIODE GEN PURP 200V 3.5A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 3.5A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	封装: Axial	库存4,016	200V	3.5A	1.3V @ 3.5A	Fast Recovery =< 500ns, > 200mA (Io)	400ns	10µA @ 200V	-	Through Hole	Axial	-	-40°C ~ 150°C
5820SMJE3/TR13	Microsemi Corporation	DIODE SCHOTTKY 20V 3A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 460mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.5mA @ 20V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB Supplier Device Package: DO-214AB Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-214AB	库存120,000	20V	3A	460mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.5mA @ 20V	-	Surface Mount	DO-214AB	DO-214AB	-55°C ~ 150°C
SDT12A120P5-7	Diodes Incorporated	SCHOTTKY RECTIFIER PDI5 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 120V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 800mV @ 12A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 120V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: PowerDI? 5 Supplier Device Package: PowerDI? 5 Operating Temperature - Junction: -55°C ~ 150°C	封装: PowerDI? 5	库存7,376	120V	12A	800mV @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 120V	-	Surface Mount	PowerDI? 5	PowerDI? 5	-55°C ~ 150°C
BYG10KHM3_A/I	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 800V 1.5A SMA Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4µs Current - Reverse Leakage @ Vr: 1µA @ 800V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-214AC, SMA	库存7,728	800V	1.5A	1.15V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	4µs	1µA @ 800V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SS215LHRUG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 2A, 1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 150V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-219AB	库存2,448	150V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
MA2C0290BF	Panasonic Electronic Components	DIODE GEN PURP 6V 50MA DO34 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 6V Current - Average Rectified (Io): 50mA Voltage - Forward (Vf) (Max) @ If: 1.1V @ 50mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 6V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AG, DO-34, Axial Supplier Device Package: DO-34 Operating Temperature - Junction: 150°C (Max)	封装: DO-204AG, DO-34, Axial	库存4,464	6V	50mA	1.1V @ 50mA	Small Signal =< 200mA (Io), Any Speed	-	10µA @ 6V	-	Through Hole	DO-204AG, DO-34, Axial	DO-34	150°C (Max)
MBR1660	SMC Diode Solutions	DIODE SCHOTTKY 60V TO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: 750mV @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 60V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	封装: TO-220-2	库存219,396	60V	-	750mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 60V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
STTH1512W	STMicroelectronics	DIODE GEN PURP 1.2KV 15A DO247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 2.1V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 105ns Current - Reverse Leakage @ Vr: 15µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-247-2 (Straight Leads) Supplier Device Package: DO-247 Operating Temperature - Junction: 175°C (Max)	封装: DO-247-2 (Straight Leads)	库存13,368	1200V	15A	2.1V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	105ns	15µA @ 1200V	-	Through Hole	DO-247-2 (Straight Leads)	DO-247	175°C (Max)
1N4148TR	Vishay Semiconductor Diodes Division	DIODE GEN PURP 75V 300MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 300mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 8ns Current - Reverse Leakage @ Vr: 25nA @ 20V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 150°C	封装: DO-204AH, DO-35, Axial	库存12,492	75V	300mA (DC)	1V @ 10mA	Fast Recovery =< 500ns, > 200mA (Io)	8ns	25nA @ 20V	4pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 150°C
RBR5RSM40BTFTL1	Rohm Semiconductor	DIODE SCHOTTKY 40V 5A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 530 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 120 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A Operating Temperature - Junction: 150°C	封装: -	库存11,400	40 V	5A	530 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	120 µA @ 40 V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A	150°C
CRS15I40A-TE85L-QM	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 1.5A S-FLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 60 µA @ 40 V Capacitance @ Vr, F: 35pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: 150°C (Max)	封装: -	Request a Quote	40 V	1.5A	550 mV @ 1.5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	60 µA @ 40 V	35pF @ 10V, 1MHz	Surface Mount	SOD-123F	S-FLAT (1.6x3.5)	150°C (Max)
RS1DB-13-G	Diodes Incorporated	DIODE GENERAL PURPOSE SMB Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
S2MFL	Taiwan Semiconductor Corporation	2A, 1000V, STANDARD RECOVERY REC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 150°C	封装: -	库存29,910	1000 V	2A	1.1 V @ 2 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 1000 V	10pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123F	-55°C ~ 150°C
RS1GL	Taiwan Semiconductor Corporation	DIODE GP 400V 800MA SUB SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	封装: -	库存61,215	400 V	800mA	1.3 V @ 800 mA	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	5 µA @ 400 V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
FESB8GTHE3_A-P	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 400V 8A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	400 V	8A	1.3 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 400 V	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-55°C ~ 150°C
MGR1203-BP	Micro Commercial Co	DIODE GEN PURP 200V 12A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 100pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	200 V	12A	1.1 V @ 12 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 200 V	100pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SIC1060P-BP	Micro Commercial Co	DIODE SIL CARB 650V 10A TO220AC Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 44 µA @ 650 V Capacitance @ Vr, F: 36pF @ 400V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C	封装: -	库存15,000	650 V	10A	1.6 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	44 µA @ 650 V	36pF @ 400V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
RSX058BM2SFHTL	Rohm Semiconductor	200V 3A, TO-252, ULTRA LOW IR SB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 870 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 nA @ 200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 Operating Temperature - Junction: 175°C	封装: -	库存7,449	200 V	3A	870 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 nA @ 200 V	-	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252	175°C
DSB0-2A30-TR	Microchip Technology	DIODE SCHOTTKY 30V 500MA DO35 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 650 mV @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 30 V Capacitance @ Vr, F: 60pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: -65°C ~ 125°C	封装: -	Request a Quote	30 V	500mA	650 mV @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	-	10 µA @ 30 V	60pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-204AH (DO-35)	-65°C ~ 125°C
NHP160SFT3G	onsemi	PUF 1A 600V IN SOD123FL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 3.8 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 2 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123FL Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	600 V	1A	3.8 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	2 µA @ 600 V	-	Surface Mount	SOD-123F	SOD-123FL	-65°C ~ 175°C

DTV32F-E3/45

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.5KV 10A ITO220

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1500V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 6A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 175ns
Current - Reverse Leakage @ Vr: 100µA @ 1500V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

封装: TO-220-2 Full Pack, Isolated Tab

库存3,568

1500V

10A

1.5V @ 6A

Fast Recovery =< 500ns, > 200mA (Io)

175ns

100µA @ 1500V

-

Through Hole

TO-220-2 Full Pack, Isolated Tab

ITO-220AC

-55°C ~ 150°C

SS35HE3/9AT

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 50V 3A DO214AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 750mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-214AB, SMC

库存6,112

50V

3A

750mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 50V

-

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-55°C ~ 150°C

S5KHE3/9AT

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 5A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5µs
Current - Reverse Leakage @ Vr: 10µA @ 800V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-214AB, SMC

库存4,464

800V

5A

1.15V @ 5A

Standard Recovery >500ns, > 200mA (Io)

2.5µs

10µA @ 800V

40pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-55°C ~ 150°C

VSKE270-12

Vishay Semiconductor Diodes Division

DIODE MODULE 1.2KV 270A MAGNAPAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 270A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50mA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: 3-MAGN-A-PAK?
Supplier Device Package: MAGN-A-PAK?
Operating Temperature - Junction: -

封装: 3-MAGN-A-PAK?

库存5,456

1200V

270A

-

Standard Recovery >500ns, > 200mA (Io)

-

50mA @ 1200V

-

Chassis Mount

3-MAGN-A-PAK?

MAGN-A-PAK?

-

JANTXV1N6631US

Microsemi Corporation

DIODE GEN PURP 1.1KV 1.4A D5B

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1100V
Current - Average Rectified (Io): 1.4A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1.4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60ns
Current - Reverse Leakage @ Vr: 4µA @ 1100V
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C

封装: SQ-MELF, B

库存5,216

1100V

1.4A

1.6V @ 1.4A

Fast Recovery =< 500ns, > 200mA (Io)

60ns

4µA @ 1100V

40pF @ 10V, 1MHz

Surface Mount

SQ-MELF, B

D-5B

-65°C ~ 150°C

JANTX1N5619US

Microsemi Corporation

DIODE GEN PURP 600V 1A D5A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250ns
Current - Reverse Leakage @ Vr: 500nA @ 600V
Capacitance @ Vr, F: 25pF @ 12V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C

封装: SQ-MELF, A

库存3,216

600V

1A

1.6V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

250ns

500nA @ 600V

25pF @ 12V, 1MHz

Surface Mount

SQ-MELF, A

D-5A

-65°C ~ 175°C

MBR6035

GeneSiC Semiconductor

DIODE SCHOTTKY 35V 60A DO5

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 60A
Voltage - Forward (Vf) (Max) @ If: 650mV @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5mA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C

封装: DO-203AB, DO-5, Stud

库存6,384

35V

60A

650mV @ 60A

Fast Recovery =< 500ns, > 200mA (Io)

-

5mA @ 20V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 150°C

LSM540G/TR13

Microsemi Corporation

DIODE SCHOTTKY 40V 5A DO215AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 520mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2mA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-215AB, SMC Gull Wing
Supplier Device Package: DO-215AB
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-215AB, SMC Gull Wing

库存2,896

40V

5A

520mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

2mA @ 40V

-

Surface Mount

DO-215AB, SMC Gull Wing

DO-215AB

-55°C ~ 150°C

SRA850HC0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 8A, 5

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

封装: TO-220-2

库存6,864

50V

8A

700mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 50V

-

Through Hole

TO-220-2

TO-220AC

-55°C ~ 150°C

SF803G C0G

TSC America Inc.

DIODE, SUPER FAST, 8A, 150V, 35N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 975mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 150V
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C

封装: TO-220-3

库存6,208

150V

8A

975mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 150V

70pF @ 4V, 1MHz

Through Hole

TO-220-3

TO-220AB

-55°C ~ 150°C

RU 4Z

Sanken

DIODE GEN PURP 200V 3.5A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 3.5A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 150°C

封装: Axial

库存4,016

200V

3.5A

1.3V @ 3.5A

Fast Recovery =< 500ns, > 200mA (Io)

400ns

10µA @ 200V

-

Through Hole

Axial

-

-40°C ~ 150°C

5820SMJE3/TR13

Microsemi Corporation

DIODE SCHOTTKY 20V 3A DO214AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 460mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1.5mA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB
Supplier Device Package: DO-214AB
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-214AB

库存120,000

20V

3A

460mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

1.5mA @ 20V

-

Surface Mount

DO-214AB

-55°C ~ 150°C

SDT12A120P5-7

Diodes Incorporated

SCHOTTKY RECTIFIER PDI5

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 120V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 800mV @ 12A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 120V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: PowerDI? 5
Supplier Device Package: PowerDI? 5
Operating Temperature - Junction: -55°C ~ 150°C

封装: PowerDI? 5

库存7,376

120V

12A

800mV @ 12A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 120V

-

Surface Mount

PowerDI? 5

-55°C ~ 150°C

BYG10KHM3_A/I

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 800V 1.5A SMA

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4µs
Current - Reverse Leakage @ Vr: 1µA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-214AC, SMA

库存7,728

800V

1.5A

1.15V @ 1.5A

Standard Recovery >500ns, > 200mA (Io)

4µs

1µA @ 800V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

SS215LHRUG

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 2A, 1

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-219AB

库存2,448

150V

2A

950mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 150V

-

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

MA2C0290BF

Panasonic Electronic Components

DIODE GEN PURP 6V 50MA DO34

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 6V
Current - Average Rectified (Io): 50mA
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 50mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 6V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AG, DO-34, Axial
Supplier Device Package: DO-34
Operating Temperature - Junction: 150°C (Max)

封装: DO-204AG, DO-34, Axial

库存4,464

6V

50mA

1.1V @ 50mA

Small Signal =< 200mA (Io), Any Speed

-

10µA @ 6V

-

Through Hole

DO-204AG, DO-34, Axial

DO-34

150°C (Max)

MBR1660

SMC Diode Solutions

DIODE SCHOTTKY 60V TO220AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: 750mV @ 16A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

封装: TO-220-2

库存219,396

60V

-

750mV @ 16A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 60V

-

Through Hole

TO-220-2

TO-220AC

-55°C ~ 150°C

STTH1512W

STMicroelectronics

DIODE GEN PURP 1.2KV 15A DO247

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 2.1V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 105ns
Current - Reverse Leakage @ Vr: 15µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-247-2 (Straight Leads)
Supplier Device Package: DO-247
Operating Temperature - Junction: 175°C (Max)

封装: DO-247-2 (Straight Leads)

库存13,368

1200V

15A

2.1V @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

105ns

15µA @ 1200V

-

Through Hole

DO-247-2 (Straight Leads)

DO-247

175°C (Max)

1N4148TR

Vishay Semiconductor Diodes Division

DIODE GEN PURP 75V 300MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 300mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8ns
Current - Reverse Leakage @ Vr: 25nA @ 20V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 150°C

封装: DO-204AH, DO-35, Axial

库存12,492

75V

300mA (DC)

1V @ 10mA

Fast Recovery =< 500ns, > 200mA (Io)

8ns

25nA @ 20V

4pF @ 0V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

DO-35

-65°C ~ 150°C

RBR5RSM40BTFTL1

Rohm Semiconductor

DIODE SCHOTTKY 40V 5A TO277A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 120 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C

封装: -

库存11,400

40 V

5A

530 mV @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

120 µA @ 40 V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277A

150°C

CRS15I40A-TE85L-QM

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 1.5A S-FLAT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1.5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 60 µA @ 40 V
Capacitance @ Vr, F: 35pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)

封装: -

Request a Quote

40 V

1.5A

550 mV @ 1.5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

60 µA @ 40 V

35pF @ 10V, 1MHz

Surface Mount

SOD-123F

S-FLAT (1.6x3.5)

150°C (Max)

RS1DB-13-G

Diodes Incorporated

DIODE GENERAL PURPOSE SMB

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

Request a Quote

-

S2MFL

Taiwan Semiconductor Corporation

2A, 1000V, STANDARD RECOVERY REC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

库存29,910

1000 V

2A

1.1 V @ 2 A

Standard Recovery >500ns, > 200mA (Io)

-

5 µA @ 1000 V

10pF @ 4V, 1MHz

Surface Mount

SOD-123F

-55°C ~ 150°C

RS1GL

Taiwan Semiconductor Corporation

DIODE GP 400V 800MA SUB SMA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

库存61,215

400 V

800mA

1.3 V @ 800 mA

Fast Recovery =< 500ns, > 200mA (Io)

150 ns

5 µA @ 400 V

10pF @ 4V, 1MHz

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

FESB8GTHE3_A-P

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 400V 8A TO263AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

400 V

8A

1.3 V @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

10 µA @ 400 V

-

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

TO-263AB (D2PAK)

-55°C ~ 150°C

MGR1203-BP

Micro Commercial Co

DIODE GEN PURP 200V 12A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

200 V

12A

1.1 V @ 12 A

Standard Recovery >500ns, > 200mA (Io)

-

5 µA @ 200 V

100pF @ 4V, 1MHz

Through Hole

TO-220-2

TO-220AC

-55°C ~ 150°C

SIC1060P-BP

Micro Commercial Co

DIODE SIL CARB 650V 10A TO220AC

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 44 µA @ 650 V
Capacitance @ Vr, F: 36pF @ 400V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

库存15,000

650 V

10A

1.6 V @ 10 A

No Recovery Time > 500mA (Io)

0 ns

44 µA @ 650 V

36pF @ 400V, 1MHz

Through Hole

TO-220-2

TO-220AC

-55°C ~ 175°C

RSX058BM2SFHTL

Rohm Semiconductor

200V 3A, TO-252, ULTRA LOW IR SB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200 nA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252
Operating Temperature - Junction: 175°C

封装: -

库存7,449

200 V

3A

870 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

200 nA @ 200 V

-

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

TO-252

175°C

DSB0-2A30-TR

Microchip Technology

DIODE SCHOTTKY 30V 500MA DO35

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 500 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 30 V
Capacitance @ Vr, F: 60pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 125°C

封装: -

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30 V

500mA

650 mV @ 500 mA

Fast Recovery =< 500ns, > 200mA (Io)

-

10 µA @ 30 V

60pF @ 0V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

DO-204AH (DO-35)

-65°C ~ 125°C

NHP160SFT3G

onsemi

PUF 1A 600V IN SOD123FL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 3.8 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

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600 V

1A

3.8 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

2 µA @ 600 V

-

Surface Mount

SOD-123F

SOD-123FL

-65°C ~ 175°C