页 1365 - 二极管 - 整流器 - 单 | 分立半导体产品

零件编号	制造商	描述	封装	库存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
RGP10D-5020M3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURPOSE DO-204AL Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	库存3,584	-	-	-	-	-	-	-	-	-	-	-
UH6PJHM3/87A	Vishay Semiconductor Diodes Division	DIODE 6A 600V TO-277A SMPC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 3V @ 6A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-277, 3-PowerDFN	库存7,184	600V	6A	3V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 600V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
FMKA140	Fairchild/ON Semiconductor	DIODE SCHOTTKY 40V 1A SMA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 600mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA (DO-214AC) Operating Temperature - Junction: -65°C ~ 125°C	封装: DO-214AC, SMA	库存290,952	40V	1A	600mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 40V	-	Surface Mount	DO-214AC, SMA	SMA (DO-214AC)	-65°C ~ 125°C
AS3PMHM3/86A	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 1KV 2.1A TO277 Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 2.1A (DC) Voltage - Forward (Vf) (Max) @ If: 920mV @ 1.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.2µs Current - Reverse Leakage @ Vr: 10µA @ 1000V Capacitance @ Vr, F: 37pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-277, 3-PowerDFN	库存4,416	1000V	2.1A (DC)	920mV @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	1.2µs	10µA @ 1000V	37pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
SRP300C-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 150V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100ns Current - Reverse Leakage @ Vr: 10µA @ 150V Capacitance @ Vr, F: 28pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -50°C ~ 125°C	封装: DO-201AD, Axial	库存2,272	150V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	100ns	10µA @ 150V	28pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-50°C ~ 125°C
BY500-200-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 5A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.35V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: 28pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: 125°C (Max)	封装: DO-201AD, Axial	库存48,000	200V	5A	1.35V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	10µA @ 200V	28pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	125°C (Max)
JANTX1N5809URS	Microsemi Corporation	DIODE GEN PURP 100V 3A BPKG Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 875mV @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 60pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, B Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C	封装: SQ-MELF, B	库存5,920	100V	3A	875mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 100V	60pF @ 10V, 1MHz	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 175°C
VS-42HF100	Vishay Semiconductor Diodes Division	DIODE 40A BRAZ SQR DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 125A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 190°C	封装: DO-203AB, DO-5, Stud	库存6,976	1000V	40A	1.3V @ 125A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB (DO-5)	-65°C ~ 190°C
VS-16F10	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 16A DO203AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 1.23V @ 50A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 12mA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA Operating Temperature - Junction: -65°C ~ 175°C	封装: DO-203AA, DO-4, Stud	库存6,752	100V	16A	1.23V @ 50A	Standard Recovery >500ns, > 200mA (Io)	-	12mA @ 100V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-203AA	-65°C ~ 175°C
SF61G R0G	TSC America Inc.	DIODE, SUPER FAST, 6A, 50V, 35NS Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 975mV @ 6A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 100pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-201AD, Axial	库存5,872	50V	6A	975mV @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 50V	100pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
AP01CV	Sanken	DIODE GEN PURP 1KV 200MA AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 4V @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 100µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	封装: Axial	库存4,448	1000V	200mA	4V @ 200mA	Small Signal =< 200mA (Io), Any Speed	200ns	100µA @ 1000V	-	Through Hole	Axial	-	-40°C ~ 150°C
RS2J-E3/5BT	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1.5A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 17pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-214AA, SMB	库存4,480	600V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	17pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
NRVBM120LT1G	ON Semiconductor	DIODE SCHOTTKY 20V 1A POWERMITE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 650mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 10V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-216AA Supplier Device Package: Powermite Operating Temperature - Junction: -55°C ~ 125°C	封装: DO-216AA	库存6,000	20V	1A	650mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 10V	-	Surface Mount	DO-216AA	Powermite	-55°C ~ 125°C
1N3957GP-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 1µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	封装: DO-204AL, DO-41, Axial	库存2,560	1000V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	2µs	1µA @ 1000V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
SR204HB0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 2A, 4 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 550mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 125°C	封装: DO-204AC, DO-15, Axial	库存5,920	40V	2A	550mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 125°C
CDBF0330-HF	Comchip Technology	DIODE SCHOTTKY 30V 350MA 1005 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 350mA Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 6.4ns Current - Reverse Leakage @ Vr: 5µA @ 20V Capacitance @ Vr, F: 50pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 1005 (2512 Metric) Supplier Device Package: 1005/SOD-323F Operating Temperature - Junction: 125°C (Max)	封装: 1005 (2512 Metric)	库存4,976	30V	350mA	600mV @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	6.4ns	5µA @ 20V	50pF @ 0V, 1MHz	Surface Mount	1005 (2512 Metric)	1005/SOD-323F	125°C (Max)
BAT42WS RRG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 0.2A, Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 500nA @ 25V Capacitance @ Vr, F: 7pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323F Operating Temperature - Junction: -65°C ~ 125°C	封装: SC-90, SOD-323F	库存3,200	30V	200mA	1V @ 200mA	Small Signal =< 200mA (Io), Any Speed	5ns	500nA @ 25V	7pF @ 1V, 1MHz	Surface Mount	SC-90, SOD-323F	SOD-323F	-65°C ~ 125°C
1N6622	Microsemi Corporation	DIODE GEN PURP 600V 1.2A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1.2A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45ns Current - Reverse Leakage @ Vr: 500nA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: A-PAK Operating Temperature - Junction: -65°C ~ 150°C	封装: A, Axial	库存7,620	600V	1.2A	1.4V @ 1.2A	Fast Recovery =< 500ns, > 200mA (Io)	45ns	500nA @ 600V	-	Through Hole	A, Axial	A-PAK	-65°C ~ 150°C
BAS85,115	Nexperia USA Inc.	DIODE SCHOTTKY 30V 200MA LLDS Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2.3µA @ 25V Capacitance @ Vr, F: 10pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: LLDS; MiniMelf Operating Temperature - Junction: 125°C (Max)	封装: DO-213AC, MINI-MELF, SOD-80	库存5,040,000	30V	200mA	800mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	2.3µA @ 25V	10pF @ 1V, 1MHz	Surface Mount	DO-213AC, MINI-MELF, SOD-80	LLDS; MiniMelf	125°C (Max)
MBRL30P100-TP	Micro Commercial Co	Interface Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 850 mV @ 30 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 100 V Capacitance @ Vr, F: 1350pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: DFN5060 Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	100 V	30A	850 mV @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 100 V	1350pF @ 4V, 1MHz	Surface Mount	8-PowerTDFN	DFN5060	-55°C ~ 150°C
1N6543-TR	Microchip Technology	RECTIFIER UFR,FRR Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
RKR0503BKH-P1	Renesas Electronics Corporation	RECTIFIER DIODE, SCHOTTKY Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
SS34HM3_A-I	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 40V 3A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	40 V	3A	500 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 40 V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
1N483B-TR	Microchip Technology	DIODE GEN PURP 70V 200MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 70 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 25 nA @ 70 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: -65°C ~ 200°C	封装: -	Request a Quote	70 V	200mA	1 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	-	25 nA @ 70 V	-	Through Hole	DO-204AH, DO-35, Axial	DO-204AH (DO-35)	-65°C ~ 200°C
D8320N04TVFXPSA1	Infineon Technologies	DIODE GEN PURP 400V 8320A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 8320A Voltage - Forward (Vf) (Max) @ If: 795 mV @ 4000 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 mA @ 400 V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AD Supplier Device Package: - Operating Temperature - Junction: -25°C ~ 150°C	封装: -	Request a Quote	400 V	8320A	795 mV @ 4000 A	Standard Recovery >500ns, > 200mA (Io)	-	100 mA @ 400 V	-	Chassis Mount	DO-200AD	-	-25°C ~ 150°C
NTE541	NTE Electronics, Inc	DIODE GEN PURP 12KV 1A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 12000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 18 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 12000 V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: - Operating Temperature - Junction: 120°C (Max)	封装: -	Request a Quote	12000 V	1A	18 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 12000 V	-	Chassis Mount	Module	-	120°C (Max)
SD103BWSL-TP	Micro Commercial Co	Interface Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 350mA Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 10 ns Current - Reverse Leakage @ Vr: 5 µA @ 30 V Capacitance @ Vr, F: 50pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323FL Operating Temperature - Junction: -55°C ~ 125°C	封装: -	Request a Quote	40 V	350mA	600 mV @ 200 mA	Fast Recovery =< 500ns, > 200mA (Io)	10 ns	5 µA @ 30 V	50pF @ 0V, 1MHz	Surface Mount	SC-90, SOD-323F	SOD-323FL	-55°C ~ 125°C
SD360S_L2_00001	Panjit International Inc.	DIODE SCHOTTKY 60V 3A TO252 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 640 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 60 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	60 V	3A	640 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 60 V	-	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252	-55°C ~ 150°C
JAN1N6620U-TR	Microchip Technology	DIODE GEN PURP 200V 1.2A D-5A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1.2A Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Current - Reverse Leakage @ Vr: 500 nA @ 200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 150°C	封装: -	Request a Quote	200 V	1.2A	1.4 V @ 1.2 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	500 nA @ 200 V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 150°C
VSS8D5M6HM3-H	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 60V 2.7A SLIMSMAW Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 2.7A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 350 µA @ 60 V Capacitance @ Vr, F: 620pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: SlimSMAW (DO-221AD) Operating Temperature - Junction: -40°C ~ 175°C	封装: -	库存26,256	60 V	2.7A	500 mV @ 2.5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	350 µA @ 60 V	620pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	SlimSMAW (DO-221AD)	-40°C ~ 175°C

RGP10D-5020M3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURPOSE DO-204AL

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

库存3,584

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UH6PJHM3/87A

Vishay Semiconductor Diodes Division

DIODE 6A 600V TO-277A SMPC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 3V @ 6A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-277, 3-PowerDFN

库存7,184

600V

6A

3V @ 6A

Fast Recovery =< 500ns, > 200mA (Io)

-

10µA @ 600V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-55°C ~ 175°C

FMKA140

Fairchild/ON Semiconductor

DIODE SCHOTTKY 40V 1A SMA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA (DO-214AC)
Operating Temperature - Junction: -65°C ~ 125°C

封装: DO-214AC, SMA

库存290,952

40V

1A

600mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 40V

-

Surface Mount

DO-214AC, SMA

SMA (DO-214AC)

-65°C ~ 125°C

AS3PMHM3/86A

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 1KV 2.1A TO277

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 2.1A (DC)
Voltage - Forward (Vf) (Max) @ If: 920mV @ 1.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2µs
Current - Reverse Leakage @ Vr: 10µA @ 1000V
Capacitance @ Vr, F: 37pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-277, 3-PowerDFN

库存4,416

1000V

2.1A (DC)

920mV @ 1.5A

Standard Recovery >500ns, > 200mA (Io)

1.2µs

10µA @ 1000V

37pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-55°C ~ 175°C

SRP300C-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100ns
Current - Reverse Leakage @ Vr: 10µA @ 150V
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 125°C

封装: DO-201AD, Axial

库存2,272

150V

3A

1.3V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

100ns

10µA @ 150V

28pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-50°C ~ 125°C

BY500-200-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 5A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: 125°C (Max)

封装: DO-201AD, Axial

库存48,000

200V

5A

1.35V @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

200ns

10µA @ 200V

28pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

125°C (Max)

JANTX1N5809URS

Microsemi Corporation

DIODE GEN PURP 100V 3A BPKG

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 875mV @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C

封装: SQ-MELF, B

库存5,920

100V

3A

875mV @ 4A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

5µA @ 100V

60pF @ 10V, 1MHz

Surface Mount

SQ-MELF, B

B, SQ-MELF

-65°C ~ 175°C

VS-42HF100

Vishay Semiconductor Diodes Division

DIODE 40A BRAZ SQR DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 125A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 190°C

封装: DO-203AB, DO-5, Stud

库存6,976

1000V

40A

1.3V @ 125A

Standard Recovery >500ns, > 200mA (Io)

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-203AB (DO-5)

-65°C ~ 190°C

VS-16F10

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 16A DO203AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 1.23V @ 50A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 12mA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA
Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-203AA, DO-4, Stud

库存6,752

100V

16A

1.23V @ 50A

Standard Recovery >500ns, > 200mA (Io)

-

12mA @ 100V

-

Chassis, Stud Mount

DO-203AA, DO-4, Stud

DO-203AA

-65°C ~ 175°C

SF61G R0G

TSC America Inc.

DIODE, SUPER FAST, 6A, 50V, 35NS

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 975mV @ 6A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-201AD, Axial

库存5,872

50V

6A

975mV @ 6A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 50V

100pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

AP01CV

Sanken

DIODE GEN PURP 1KV 200MA AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 4V @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 100µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 150°C

封装: Axial

库存4,448

1000V

200mA

4V @ 200mA

Small Signal =< 200mA (Io), Any Speed

200ns

100µA @ 1000V

-

Through Hole

Axial

-

-40°C ~ 150°C

RS2J-E3/5BT

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1.5A DO214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-214AA, SMB

库存4,480

600V

1.5A

1.3V @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

250ns

5µA @ 600V

17pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

NRVBM120LT1G

ON Semiconductor

DIODE SCHOTTKY 20V 1A POWERMITE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 650mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 10V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-216AA
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C

封装: DO-216AA

库存6,000

20V

1A

650mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 10V

-

Surface Mount

DO-216AA

Powermite

-55°C ~ 125°C

1N3957GP-E3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 1µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-204AL, DO-41, Axial

库存2,560

1000V

1A

1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

2µs

1µA @ 1000V

-

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 175°C

SR204HB0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 2A, 4

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 125°C

封装: DO-204AC, DO-15, Axial

库存5,920

40V

2A

550mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 40V

-

Through Hole

DO-204AC, DO-15, Axial

DO-204AC (DO-15)

-55°C ~ 125°C

CDBF0330-HF

Comchip Technology

DIODE SCHOTTKY 30V 350MA 1005

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 350mA
Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6.4ns
Current - Reverse Leakage @ Vr: 5µA @ 20V
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 1005 (2512 Metric)
Supplier Device Package: 1005/SOD-323F
Operating Temperature - Junction: 125°C (Max)

封装: 1005 (2512 Metric)

库存4,976

30V

350mA

600mV @ 200mA

Fast Recovery =< 500ns, > 200mA (Io)

6.4ns

5µA @ 20V

50pF @ 0V, 1MHz

Surface Mount

1005 (2512 Metric)

1005/SOD-323F

125°C (Max)

BAT42WS RRG

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 0.2A,

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5ns
Current - Reverse Leakage @ Vr: 500nA @ 25V
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Supplier Device Package: SOD-323F
Operating Temperature - Junction: -65°C ~ 125°C

封装: SC-90, SOD-323F

库存3,200

30V

200mA

1V @ 200mA

Small Signal =< 200mA (Io), Any Speed

5ns

500nA @ 25V

7pF @ 1V, 1MHz

Surface Mount

SC-90, SOD-323F

SOD-323F

-65°C ~ 125°C

1N6622

Microsemi Corporation

DIODE GEN PURP 600V 1.2A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1.2A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45ns
Current - Reverse Leakage @ Vr: 500nA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: A-PAK
Operating Temperature - Junction: -65°C ~ 150°C

封装: A, Axial

库存7,620

600V

1.2A

1.4V @ 1.2A

Fast Recovery =< 500ns, > 200mA (Io)

45ns

500nA @ 600V

-

Through Hole

A, Axial

A-PAK

-65°C ~ 150°C

BAS85,115

Nexperia USA Inc.

DIODE SCHOTTKY 30V 200MA LLDS

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2.3µA @ 25V
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: LLDS; MiniMelf
Operating Temperature - Junction: 125°C (Max)

封装: DO-213AC, MINI-MELF, SOD-80

库存5,040,000

30V

200mA

800mV @ 100mA

Small Signal =< 200mA (Io), Any Speed

-

2.3µA @ 25V

10pF @ 1V, 1MHz

Surface Mount

DO-213AC, MINI-MELF, SOD-80

LLDS; MiniMelf

125°C (Max)

MBRL30P100-TP

Micro Commercial Co

Interface

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 30 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Capacitance @ Vr, F: 1350pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: DFN5060
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

100 V

30A

850 mV @ 30 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 100 V

1350pF @ 4V, 1MHz

Surface Mount

8-PowerTDFN

DFN5060

-55°C ~ 150°C

1N6543-TR

Microchip Technology

RECTIFIER UFR,FRR

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

Request a Quote

-

RKR0503BKH-P1

Renesas Electronics Corporation

RECTIFIER DIODE, SCHOTTKY

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

Request a Quote

-

SS34HM3_A-I

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 40V 3A DO214AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

40 V

3A

500 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 40 V

-

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 150°C

1N483B-TR

Microchip Technology

DIODE GEN PURP 70V 200MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 70 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 25 nA @ 70 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 200°C

封装: -

Request a Quote

70 V

200mA

1 V @ 100 mA

Small Signal =< 200mA (Io), Any Speed

-

25 nA @ 70 V

-

Through Hole

DO-204AH, DO-35, Axial

DO-204AH (DO-35)

-65°C ~ 200°C

D8320N04TVFXPSA1

Infineon Technologies

DIODE GEN PURP 400V 8320A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 8320A
Voltage - Forward (Vf) (Max) @ If: 795 mV @ 4000 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 mA @ 400 V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: DO-200AD
Supplier Device Package: -
Operating Temperature - Junction: -25°C ~ 150°C

封装: -

Request a Quote

400 V

8320A

795 mV @ 4000 A

Standard Recovery >500ns, > 200mA (Io)

-

100 mA @ 400 V

-

Chassis Mount

DO-200AD

-

-25°C ~ 150°C

NTE541

NTE Electronics, Inc

DIODE GEN PURP 12KV 1A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 12000 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 18 V @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 12000 V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -
Operating Temperature - Junction: 120°C (Max)

封装: -

Request a Quote

12000 V

1A

18 V @ 1 A

Standard Recovery >500ns, > 200mA (Io)

-

5 µA @ 12000 V

-

Chassis Mount

Module

-

120°C (Max)

SD103BWSL-TP

Micro Commercial Co

Interface

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 350mA
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Supplier Device Package: SOD-323FL
Operating Temperature - Junction: -55°C ~ 125°C

封装: -

Request a Quote

40 V

350mA

600 mV @ 200 mA

Fast Recovery =< 500ns, > 200mA (Io)

10 ns

5 µA @ 30 V

50pF @ 0V, 1MHz

Surface Mount

SC-90, SOD-323F

SOD-323FL

-55°C ~ 125°C

SD360S_L2_00001

Panjit International Inc.

DIODE SCHOTTKY 60V 3A TO252

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

60 V

3A

640 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 60 V

-

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

TO-252

-55°C ~ 150°C

JAN1N6620U-TR

Microchip Technology

DIODE GEN PURP 200V 1.2A D-5A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 1.2A
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C

封装: -

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200 V

1.2A

1.4 V @ 1.2 A

Fast Recovery =< 500ns, > 200mA (Io)

30 ns

500 nA @ 200 V

-

Surface Mount

SQ-MELF, A

D-5A

-65°C ~ 150°C

VSS8D5M6HM3-H

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 60V 2.7A SLIMSMAW

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 2.7A
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2.5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 350 µA @ 60 V
Capacitance @ Vr, F: 620pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: SlimSMAW (DO-221AD)
Operating Temperature - Junction: -40°C ~ 175°C

封装: -

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60 V

2.7A

500 mV @ 2.5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

350 µA @ 60 V

620pF @ 4V, 1MHz

Surface Mount

DO-221AC, SMA Flat Leads

SlimSMAW (DO-221AD)

-40°C ~ 175°C