图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microsemi Corporation |
DIODE GEN PURP 800V 35A DO203AB
|
封装: DO-203AB, DO-5, Stud |
库存2,016 |
|
800V | 35A | 1.4V @ 110A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 800V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 175°C |
||
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 10A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存3,984 |
|
100V | 10A | 810mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 100V | 400pF @ 5V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 150°C |
||
NXP |
DIODE AVALANCHE 100V 850MA MELF
|
封装: SOD-87 |
库存3,408 |
|
100V | 850mA | 980mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 100V | 50pF @ 0V, 1MHz | Surface Mount | SOD-87 | MELF | -65°C ~ 175°C |
||
Vishay Semiconductor Diodes Division |
DIODE HYPERFAST 8A TO-220FP
|
封装: TO-220-2 Full Pack |
库存5,504 |
|
600V | 8A | 2.4V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 50µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220 Full Pack | -65°C ~ 175°C |
||
TSC America Inc. |
DIODE, SUPER FAST, 6A, 100V, 35N
|
封装: DO-201AD, Axial |
库存6,816 |
|
100V | 6A | 975mV @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 100V | 100pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
||
Comchip Technology |
DIODE GEN PURP 1KV 6A R6
|
封装: R6, Axial |
库存2,784 |
|
1000V | 6A | 1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1000V | 100pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -55°C ~ 125°C |
||
TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 8A, 4
|
封装: DO-201AD, Axial |
库存5,728 |
|
40V | 8A | 550mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 125°C |
||
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 1KV 1.5A DO220
|
封装: DO-220AA |
库存7,808 |
|
1000V | 1.5A (DC) | 1.15V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 5µA @ 1000V | 10.4pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 175°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A DO213AB
|
封装: DO-213AB, MELF (Glass) |
库存6,304 |
|
600V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 5µA @ 600V | 15pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | -65°C ~ 175°C |
||
TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 1A, 1
|
封装: DO-219AB |
库存2,592 |
|
150V | 1A | 900mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 150V | - | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
||
Comchip Technology |
DIODE GEN PURP 80V 125MA 1005
|
封装: 1005 (2512 Metric) |
库存4,576 |
|
80V | 125mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 9ns | 100nA @ 80V | 9pF @ 0.5V, 1MHz | Surface Mount | 1005 (2512 Metric) | 1005/SOD-323F | 125°C (Max) |
||
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 10A ITO220AC
|
封装: TO-220-2 Full Pack, Isolated Tab |
库存159,336 |
|
60V | 10A | 800mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 60V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | ITO-220AC | -65°C ~ 150°C |
||
Diotec Semiconductor |
IC
|
封装: - |
Request a Quote |
|
100 V | 1A | 1 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 100 V | - | Surface Mount | DO-214AC, SMA | SMA/DO-214AC | -50°C ~ 150°C |
||
Vishay General Semiconductor - Diodes Division |
DIODE SCHOTTKY 60V 2A DO214AC
|
封装: - |
库存62,703 |
|
60 V | 2A | 750 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 60 V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
||
Rohm Semiconductor |
DIODE SCHOTTKY 30V 1A PMDU
|
封装: - |
库存10,860 |
|
30 V | 1A | 520 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 30 V | - | Surface Mount | SOD-123F | PMDU | 150°C (Max) |
||
Vishay General Semiconductor - Diodes Division |
DIODE GEN PURP 150V 2A DO214AA
|
封装: - |
Request a Quote |
|
150 V | 2A | 1.05 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 2 µA @ 150 V | 42pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 175°C |
||
Sanken Electric USA Inc. |
ULTRAFAST RECOVERY DIODE (FRAME)
|
封装: - |
Request a Quote |
|
600 V | 15A | 1.3 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 100 ns | 30 µA @ 600 V | - | Through Hole | TO-220-2 | TO-220-2 | -40°C ~ 150°C |
||
onsemi |
DIODE SCHOTT 40V 200MA 2-X2DFNW
|
封装: - |
库存24,000 |
|
40 V | 200mA | 1.2 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 4 ns | 500 nA @ 40 V | 2pF @ 1V, 1MHz | Surface Mount, Wettable Flank | 2-XDFN | 2-X2DFNW (1x0.6) | -55°C ~ 150°C |
||
Comchip Technology |
DIODE GEN PURP 50V 1A DO41
|
封装: - |
Request a Quote |
|
50 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 5 µA @ 50 V | 25pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -55°C ~ 150°C |
||
Central Semiconductor Corp |
DIODE SCHOTTKY 40V 2A SMB
|
封装: - |
Request a Quote |
|
40 V | 2A | 400 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 40 V | 200pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | SMB | -65°C ~ 150°C |
||
Micro Commercial Co |
DIODE GEN PURP 800V 1A DO214AC
|
封装: - |
Request a Quote |
|
800 V | 1A | - | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 5 µA @ 800 V | 50pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (HSMA) | -50°C ~ 150°C |
||
Microchip Technology |
DIODE SCHOTTKY 40V 3A B SQ-MELF
|
封装: - |
Request a Quote |
|
40 V | 3A | 500 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | - | - | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 150°C |
||
Infineon Technologies |
DIODE GEN PURP 6.2KV 2200A
|
封装: - |
Request a Quote |
|
6200 V | 2200A | 1.8 V @ 2500 A | Standard Recovery >500ns, > 200mA (Io) | - | 50 mA @ 6200 V | - | Clamp On | DO-200AC, K-PUK | - | -40°C ~ 160°C |
||
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 1A DO204AL
|
封装: - |
库存15,000 |
|
200 V | 1A | 1 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 200 V | 17pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
||
Micro Commercial Co |
DIODE GEN PURP 400V 3A DO201AD
|
封装: - |
Request a Quote |
|
400 V | 3A | 1.3 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 400 V | 75pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
||
Micro Commercial Co |
Interface
|
封装: - |
Request a Quote |
|
1200 V | 1A | 1.85 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 5 µA @ 1200 V | 45pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -55°C ~ 150°C |
||
Panjit International Inc. |
DIODE SCHOTTKY 30V 8A TO263
|
封装: - |
Request a Quote |
|
30 V | 8A | 550 mV @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 30 V | - | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263 | -55°C ~ 125°C |
||
onsemi |
DIODE SIL CARB 650V 23A TO247-3
|
封装: - |
库存1,341 |
|
650 V | 23A | - | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 887pF @ 1V, 100kHz | Through Hole | TO-247-3 | TO-247-3 | -55°C ~ 175°C |
||
Micro Commercial Co |
MOSFET
|
封装: - |
Request a Quote |
|
40 V | 3A | 450 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 40 V | 205pF @ 4V, 1MHz | Surface Mount | SOD-123H | SOD-123HL | -55°C ~ 150°C |
||
Vishay General Semiconductor - Diodes Division |
DIODE GEN PURP 200V 1A DO214BA
|
封装: - |
Request a Quote |
|
200 V | 1A | 1 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 200 V | 15pF @ 4V, 1MHz | Surface Mount | DO-214BA | DO-214BA (GF1) | -65°C ~ 175°C |