页 1361 - 二极管 - 整流器 - 单 | 分立半导体产品

零件编号	制造商	描述	封装	库存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
JAN1N1616R	Microsemi Corporation	DIODE GEN PURP 600V 15A DO203AA Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 150°C	封装: DO-203AA, DO-4, Stud	库存6,784	600V	15A	1.5V @ 15A	Standard Recovery >500ns, > 200mA (Io)	-	50µA @ 600V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-203AA (DO-4)	-65°C ~ 150°C
RGP10ME-M3/54	Vishay Semiconductor Diodes Division	DIODE SW 1A 1000V 500NS DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	封装: DO-204AL, DO-41, Axial	库存3,184	1000V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 600V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
NUR460P/L05U	WeEn Semiconductors	DIODE GEN PURP 600V 4A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.28V @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 10µA @ 1.5V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -	封装: DO-201AD, Axial	库存3,232	600V	4A	1.28V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 1.5V	-	Through Hole	DO-201AD, Axial	DO-201AD	-
MBRB10H60HE3/45	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 60V 10A TO263AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 710mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -65°C ~ 175°C	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存3,072	60V	10A	710mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 60V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-65°C ~ 175°C
80SQ035PBF	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 35V 8A DO204AR Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 530mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2mA @ 35V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AR, Axial Supplier Device Package: DO-204AR Operating Temperature - Junction: -55°C ~ 175°C	封装: DO-204AR, Axial	库存3,792	35V	8A	530mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	2mA @ 35V	-	Through Hole	DO-204AR, Axial	DO-204AR	-55°C ~ 175°C
BAT1502ELE6327XTMA1	Infineon Technologies	DIODE SCHOTTKY 4V 110MA TSLP-2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 4V Current - Average Rectified (Io): 110mA (DC) Voltage - Forward (Vf) (Max) @ If: 410mV @ 10mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 1V Capacitance @ Vr, F: 350pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 2-XDFN Supplier Device Package: PG-TSLP-2-19 Operating Temperature - Junction: -55°C ~ 150°C	封装: 2-XDFN	库存3,328	4V	110mA (DC)	410mV @ 10mA	Small Signal =< 200mA (Io), Any Speed	-	5µA @ 1V	350pF @ 0V, 1MHz	Surface Mount	2-XDFN	PG-TSLP-2-19	-55°C ~ 150°C
JAN1N6642UBCC	Microsemi Corporation	DIODE GEN PURP 75V 300MA UB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 300mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 500nA @ 75V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: 3-UB (3.09x2.45) Operating Temperature - Junction: -65°C ~ 175°C	封装: 3-SMD, No Lead	库存5,056	75V	300mA	1.2V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	5ns	500nA @ 75V	5pF @ 0V, 1MHz	Surface Mount	3-SMD, No Lead	3-UB (3.09x2.45)	-65°C ~ 175°C
JANTX1N6639US	Microsemi Corporation	DIODE SWITCHING 300MA D-5D Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 300mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.2V @ 300mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 100nA @ 75V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, D Supplier Device Package: D-5D Operating Temperature - Junction: -65°C ~ 175°C	封装: SQ-MELF, D	库存7,232	75V	300mA (DC)	1.2V @ 300mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	100nA @ 75V	-	Surface Mount	SQ-MELF, D	D-5D	-65°C ~ 175°C
MBR35100R	GeneSiC Semiconductor	DIODE SCHOTTKY REV 100V DO4 Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 840mV @ 35A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.5mA @ 20V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-203AA, DO-4, Stud	库存7,216	100V	35A	840mV @ 35A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.5mA @ 20V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-4	-55°C ~ 150°C
VS-95PF160	Vishay Semiconductor Diodes Division	DIODE STD RECOVERY 95A DO-5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600V Current - Average Rectified (Io): 95A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 267A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -55°C ~ 180°C	封装: DO-203AB, DO-5, Stud	库存7,536	1600V	95A	1.4V @ 267A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB (DO-5)	-55°C ~ 180°C
APT75DQ100BG	Microsemi Corporation	DIODE GEN PURP 1KV 75A TO247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 75A Voltage - Forward (Vf) (Max) @ If: 3V @ 75A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250ns Current - Reverse Leakage @ Vr: 100µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-247-2	库存7,664	1000V	75A	3V @ 75A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	100µA @ 1000V	-	Through Hole	TO-247-2	TO-247 [B]	-55°C ~ 175°C
HSM5100GE3/TR13	Microsemi Corporation	DIODE SCHOTTKY 100V 5A DO215AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 800mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 250µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-215AB, SMC Gull Wing Supplier Device Package: DO-215AB Operating Temperature - Junction: -55°C ~ 175°C	封装: DO-215AB, SMC Gull Wing	库存3,408	100V	5A	800mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	250µA @ 100V	-	Surface Mount	DO-215AB, SMC Gull Wing	DO-215AB	-55°C ~ 175°C
SBL10L25-E3/45	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 25V 10A TO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 25V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 460mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 800µA @ 25V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 150°C	封装: TO-220-2	库存3,248	25V	10A	460mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	800µA @ 25V	-	Through Hole	TO-220-2	TO-220AC	-65°C ~ 150°C
SE07PB-M3/85A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 700MA DO220 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 700mA Voltage - Forward (Vf) (Max) @ If: 1.05V @ 700mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 5pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 175°C	封装: DO-220AA	库存2,624	100V	700mA	1.05V @ 700mA	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 100V	5pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 175°C
BAV103 L0G	TSC America Inc.	DIODE, SWITCHING & ARRAY, 0.2A, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 250V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100nA @ 200V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: Mini MELF Operating Temperature - Junction: -65°C ~ 200°C	封装: DO-213AC, MINI-MELF, SOD-80	库存3,136	250V	200mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	100nA @ 200V	4pF @ 0V, 1MHz	Surface Mount	DO-213AC, MINI-MELF, SOD-80	Mini MELF	-65°C ~ 200°C
IDH10SG60CXKSA1	Infineon Technologies	DIODE SCHOTTKY 600V 10A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 2.1V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 90µA @ 600V Capacitance @ Vr, F: 290pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: PG-TO220-2 Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-220-2	库存9,240	600V	10A (DC)	2.1V @ 10A	No Recovery Time > 500mA (Io)	0ns	90µA @ 600V	290pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2	-55°C ~ 175°C
SK33A-LTP	Micro Commercial Co	DIODE SCHOTTKY 30V 3A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 30V Capacitance @ Vr, F: 250pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -50°C ~ 125°C	封装: DO-214AC, SMA	库存2,464	30V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	250pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-50°C ~ 125°C
1PS70SB20,115	Nexperia USA Inc.	DIODE SCHOTTKY 40V 500MA SOT323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 500mA (DC) Voltage - Forward (Vf) (Max) @ If: 550mV @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 35V Capacitance @ Vr, F: 90pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323-3 Operating Temperature - Junction: 125°C (Max)	封装: SC-70, SOT-323	库存133,998	40V	500mA (DC)	550mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 35V	90pF @ 0V, 1MHz	Surface Mount	SC-70, SOT-323	SOT-323-3	125°C (Max)
PMEG6030EVPX	Nexperia USA Inc.	DIODE SCHOTTKY 60V 3A SOD128 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 475mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20ns Current - Reverse Leakage @ Vr: 400µA @ 60V Capacitance @ Vr, F: 575pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: CFP5 Operating Temperature - Junction: 175°C (Max)	封装: SOD-128	库存739,566	60V	3A	475mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	400µA @ 60V	575pF @ 1V, 1MHz	Surface Mount	SOD-128	CFP5	175°C (Max)
RL107	SMC Diode Solutions	DIODE GEN PURP 1KV 1A A-405 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: A-405 Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	1000 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 1000 V	15pF @ 4V, 1MHz	Through Hole	Axial	A-405	-65°C ~ 175°C
V10PM45-M3-H	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 45V 10A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 600 mV @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300 µA @ 45 V Capacitance @ Vr, F: 1850pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 175°C	封装: -	库存13,500	45 V	10A	600 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	300 µA @ 45 V	1850pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-40°C ~ 175°C
PU2JLW	Taiwan Semiconductor Corporation	25NS, 2A, 600V, ULTRA FAST RECOV Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 26 ns Current - Reverse Leakage @ Vr: 2 µA @ 600 V Capacitance @ Vr, F: 22pF @ 4A, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 150°C	封装: -	库存60,000	600 V	2A	1.5 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	26 ns	2 µA @ 600 V	22pF @ 4A, 1MHz	Surface Mount	SOD-123W	SOD-123W	-55°C ~ 150°C
1N645-1E3-TR	Microchip Technology	DIODE GEN PURP 225V 400MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 225 V Current - Average Rectified (Io): 400mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 nA @ 225 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	225 V	400mA	1 V @ 400 mA	Standard Recovery >500ns, > 200mA (Io)	-	50 nA @ 225 V	-	Through Hole	DO-204AH, DO-35, Axial	DO-204AH (DO-35)	-65°C ~ 175°C
HERAF1004G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 10A ITO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 10 µA @ 300 V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	封装: -	库存3,000	300 V	10A	1 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 300 V	80pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
MBRS16150	Taiwan Semiconductor Corporation	16A, 150V, SCHOTTKY RECTIFIER Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 16 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 150 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	150 V	16A	950 mV @ 16 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 150 V	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-55°C ~ 150°C
LL5818-J0-L0	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 1A MELF Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 30 V Capacitance @ Vr, F: 110pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF Supplier Device Package: MELF Operating Temperature - Junction: -65°C ~ 125°C	封装: -	Request a Quote	30 V	1A	550 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 30 V	110pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF	MELF	-65°C ~ 125°C
MBRB840-TP	Micro Commercial Co	Interface Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	40 V	8A	550 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 40 V	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 150°C
NTE599	NTE Electronics, Inc	DIODE GEN PURP 200V 15A TO220-2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 500 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	200 V	15A	1.05 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	500 µA @ 200 V	-	Through Hole	TO-220-2	TO-220-2	-65°C ~ 175°C
JANTX1N5550-TR	Microchip Technology	DIODE GEN PURP 200V 5A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Current - Reverse Leakage @ Vr: 1 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: B, Axial Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	200 V	5A	1.2 V @ 9 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	1 µA @ 200 V	-	Through Hole	B, Axial	B, Axial	-65°C ~ 175°C
STPS5H100UFN	STMicroelectronics	DIODE SCHOTTKY 100V 5A SMBFLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 745 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 8 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-221AA, SMB Flat Leads Supplier Device Package: SMBflat Notch Operating Temperature - Junction: 175°C	封装: -	Request a Quote	100 V	5A	745 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	8 µA @ 100 V	-	Surface Mount	DO-221AA, SMB Flat Leads	SMBflat Notch	175°C

JAN1N1616R

Microsemi Corporation

DIODE GEN PURP 600V 15A DO203AA

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C

封装: DO-203AA, DO-4, Stud

库存6,784

600V

15A

1.5V @ 15A

Standard Recovery >500ns, > 200mA (Io)

-

50µA @ 600V

-

Chassis, Stud Mount

DO-203AA, DO-4, Stud

DO-203AA (DO-4)

-65°C ~ 150°C

RGP10ME-M3/54

Vishay Semiconductor Diodes Division

DIODE SW 1A 1000V 500NS DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-204AL, DO-41, Axial

库存3,184

1000V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

500ns

5µA @ 600V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 175°C

NUR460P/L05U

WeEn Semiconductors

DIODE GEN PURP 600V 4A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.28V @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 10µA @ 1.5V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -

封装: DO-201AD, Axial

库存3,232

600V

4A

1.28V @ 4A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

10µA @ 1.5V

-

Through Hole

DO-201AD, Axial

DO-201AD

-

MBRB10H60HE3/45

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 10A TO263AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 710mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 175°C

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存3,072

60V

10A

710mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 60V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB

-65°C ~ 175°C

80SQ035PBF

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 35V 8A DO204AR

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 530mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2mA @ 35V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AR, Axial
Supplier Device Package: DO-204AR
Operating Temperature - Junction: -55°C ~ 175°C

封装: DO-204AR, Axial

库存3,792

35V

8A

530mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

-

2mA @ 35V

-

Through Hole

DO-204AR, Axial

DO-204AR

-55°C ~ 175°C

BAT1502ELE6327XTMA1

Infineon Technologies

DIODE SCHOTTKY 4V 110MA TSLP-2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 4V
Current - Average Rectified (Io): 110mA (DC)
Voltage - Forward (Vf) (Max) @ If: 410mV @ 10mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 1V
Capacitance @ Vr, F: 350pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-XDFN
Supplier Device Package: PG-TSLP-2-19
Operating Temperature - Junction: -55°C ~ 150°C

封装: 2-XDFN

库存3,328

4V

110mA (DC)

410mV @ 10mA

Small Signal =< 200mA (Io), Any Speed

-

5µA @ 1V

350pF @ 0V, 1MHz

Surface Mount

2-XDFN

PG-TSLP-2-19

-55°C ~ 150°C

JAN1N6642UBCC

Microsemi Corporation

DIODE GEN PURP 75V 300MA UB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 300mA
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5ns
Current - Reverse Leakage @ Vr: 500nA @ 75V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: 3-UB (3.09x2.45)
Operating Temperature - Junction: -65°C ~ 175°C

封装: 3-SMD, No Lead

库存5,056

75V

300mA

1.2V @ 100mA

Fast Recovery =< 500ns, > 200mA (Io)

5ns

500nA @ 75V

5pF @ 0V, 1MHz

Surface Mount

3-SMD, No Lead

3-UB (3.09x2.45)

-65°C ~ 175°C

JANTX1N6639US

Microsemi Corporation

DIODE SWITCHING 300MA D-5D

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 300mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 300mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 100nA @ 75V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, D
Supplier Device Package: D-5D
Operating Temperature - Junction: -65°C ~ 175°C

封装: SQ-MELF, D

库存7,232

75V

300mA (DC)

1.2V @ 300mA

Fast Recovery =< 500ns, > 200mA (Io)

4ns

100nA @ 75V

-

Surface Mount

SQ-MELF, D

D-5D

-65°C ~ 175°C

MBR35100R

GeneSiC Semiconductor

DIODE SCHOTTKY REV 100V DO4

Diode Type: Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 840mV @ 35A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1.5mA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-203AA, DO-4, Stud

库存7,216

100V

35A

840mV @ 35A

Fast Recovery =< 500ns, > 200mA (Io)

-

1.5mA @ 20V

-

Chassis, Stud Mount

DO-203AA, DO-4, Stud

DO-4

-55°C ~ 150°C

VS-95PF160

Vishay Semiconductor Diodes Division

DIODE STD RECOVERY 95A DO-5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io): 95A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 267A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -55°C ~ 180°C

封装: DO-203AB, DO-5, Stud

库存7,536

1600V

95A

1.4V @ 267A

Standard Recovery >500ns, > 200mA (Io)

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-203AB (DO-5)

-55°C ~ 180°C

APT75DQ100BG

Microsemi Corporation

DIODE GEN PURP 1KV 75A TO247

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 75A
Voltage - Forward (Vf) (Max) @ If: 3V @ 75A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250ns
Current - Reverse Leakage @ Vr: 100µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-247-2

库存7,664

1000V

75A

3V @ 75A

Fast Recovery =< 500ns, > 200mA (Io)

250ns

100µA @ 1000V

-

Through Hole

TO-247-2

TO-247 [B]

-55°C ~ 175°C

HSM5100GE3/TR13

Microsemi Corporation

DIODE SCHOTTKY 100V 5A DO215AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 800mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 250µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-215AB, SMC Gull Wing
Supplier Device Package: DO-215AB
Operating Temperature - Junction: -55°C ~ 175°C

封装: DO-215AB, SMC Gull Wing

库存3,408

100V

5A

800mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

250µA @ 100V

-

Surface Mount

DO-215AB, SMC Gull Wing

DO-215AB

-55°C ~ 175°C

SBL10L25-E3/45

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 25V 10A TO220AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 25V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 460mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 800µA @ 25V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C

封装: TO-220-2

库存3,248

25V

10A

460mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

800µA @ 25V

-

Through Hole

TO-220-2

TO-220AC

-65°C ~ 150°C

SE07PB-M3/85A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 700MA DO220

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 700mA
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 700mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C

封装: DO-220AA

库存2,624

100V

700mA

1.05V @ 700mA

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 100V

5pF @ 4V, 1MHz

Surface Mount

DO-220AA

DO-220AA (SMP)

-55°C ~ 175°C

BAV103 L0G

TSC America Inc.

DIODE, SWITCHING & ARRAY, 0.2A,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 250V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100nA @ 200V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: Mini MELF
Operating Temperature - Junction: -65°C ~ 200°C

封装: DO-213AC, MINI-MELF, SOD-80

库存3,136

250V

200mA

1V @ 100mA

Small Signal =< 200mA (Io), Any Speed

-

100nA @ 200V

4pF @ 0V, 1MHz

Surface Mount

DO-213AC, MINI-MELF, SOD-80

Mini MELF

-65°C ~ 200°C

IDH10SG60CXKSA1

Infineon Technologies

DIODE SCHOTTKY 600V 10A TO220-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 10A (DC)
Voltage - Forward (Vf) (Max) @ If: 2.1V @ 10A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 90µA @ 600V
Capacitance @ Vr, F: 290pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-220-2

库存9,240

600V

10A (DC)

2.1V @ 10A

No Recovery Time > 500mA (Io)

0ns

90µA @ 600V

290pF @ 1V, 1MHz

Through Hole

TO-220-2

PG-TO220-2

-55°C ~ 175°C

SK33A-LTP

Micro Commercial Co

DIODE SCHOTTKY 30V 3A DO214AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 30V
Capacitance @ Vr, F: 250pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -50°C ~ 125°C

封装: DO-214AC, SMA

库存2,464

30V

3A

500mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 30V

250pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-50°C ~ 125°C

1PS70SB20,115

Nexperia USA Inc.

DIODE SCHOTTKY 40V 500MA SOT323

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 500mA (DC)
Voltage - Forward (Vf) (Max) @ If: 550mV @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 35V
Capacitance @ Vr, F: 90pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323-3
Operating Temperature - Junction: 125°C (Max)

封装: SC-70, SOT-323

库存133,998

40V

500mA (DC)

550mV @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 35V

90pF @ 0V, 1MHz

Surface Mount

SC-70, SOT-323

SOT-323-3

125°C (Max)

PMEG6030EVPX

Nexperia USA Inc.

DIODE SCHOTTKY 60V 3A SOD128

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 475mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20ns
Current - Reverse Leakage @ Vr: 400µA @ 60V
Capacitance @ Vr, F: 575pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: CFP5
Operating Temperature - Junction: 175°C (Max)

封装: SOD-128

库存739,566

60V

3A

475mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

20ns

400µA @ 60V

575pF @ 1V, 1MHz

Surface Mount

SOD-128

CFP5

175°C (Max)

RL107

SMC Diode Solutions

DIODE GEN PURP 1KV 1A A-405

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: A-405
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

Request a Quote

1000 V

1A

1.1 V @ 1 A

Standard Recovery >500ns, > 200mA (Io)

-

5 µA @ 1000 V

15pF @ 4V, 1MHz

Through Hole

Axial

A-405

-65°C ~ 175°C

V10PM45-M3-H

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 45V 10A TO277A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 10 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 300 µA @ 45 V
Capacitance @ Vr, F: 1850pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 175°C

封装: -

库存13,500

45 V

10A

600 mV @ 10 A

Fast Recovery =< 500ns, > 200mA (Io)

-

300 µA @ 45 V

1850pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-40°C ~ 175°C

PU2JLW

Taiwan Semiconductor Corporation

25NS, 2A, 600V, ULTRA FAST RECOV

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 26 ns
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Capacitance @ Vr, F: 22pF @ 4A, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123W
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

库存60,000

600 V

2A

1.5 V @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

26 ns

2 µA @ 600 V

22pF @ 4A, 1MHz

Surface Mount

SOD-123W

-55°C ~ 150°C

1N645-1E3-TR

Microchip Technology

DIODE GEN PURP 225V 400MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 225 V
Current - Average Rectified (Io): 400mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 nA @ 225 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

Request a Quote

225 V

400mA

1 V @ 400 mA

Standard Recovery >500ns, > 200mA (Io)

-

50 nA @ 225 V

-

Through Hole

DO-204AH, DO-35, Axial

DO-204AH (DO-35)

-65°C ~ 175°C

HERAF1004G

Taiwan Semiconductor Corporation

DIODE GEN PURP 300V 10A ITO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

库存3,000

300 V

10A

1 V @ 10 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

10 µA @ 300 V

80pF @ 4V, 1MHz

Through Hole

TO-220-2 Full Pack

ITO-220AC

-55°C ~ 150°C

MBRS16150

Taiwan Semiconductor Corporation

16A, 150V, SCHOTTKY RECTIFIER

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 16 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

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150 V

16A

950 mV @ 16 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 150 V

-

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

TO-263AB (D2PAK)

-55°C ~ 150°C

LL5818-J0-L0

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 30V 1A MELF

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Supplier Device Package: MELF
Operating Temperature - Junction: -65°C ~ 125°C

封装: -

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30 V

1A

550 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 30 V

110pF @ 4V, 1MHz

Surface Mount

DO-213AB, MELF

MELF

-65°C ~ 125°C

MBRB840-TP

Micro Commercial Co

Interface

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

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40 V

8A

550 mV @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 40 V

-

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

D2PAK

-55°C ~ 150°C

NTE599

NTE Electronics, Inc

DIODE GEN PURP 200V 15A TO220-2

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

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200 V

15A

1.05 V @ 15 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

500 µA @ 200 V

-

Through Hole

TO-220-2

-65°C ~ 175°C

JANTX1N5550-TR

Microchip Technology

DIODE GEN PURP 200V 5A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: B, Axial
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

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200 V

5A

1.2 V @ 9 A

Standard Recovery >500ns, > 200mA (Io)

2 µs

1 µA @ 200 V

-

Through Hole

B, Axial

-65°C ~ 175°C

STPS5H100UFN

STMicroelectronics

DIODE SCHOTTKY 100V 5A SMBFLAT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 745 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 8 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-221AA, SMB Flat Leads
Supplier Device Package: SMBflat Notch
Operating Temperature - Junction: 175°C

封装: -

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100 V

5A

745 mV @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

8 µA @ 100 V

-

Surface Mount

DO-221AA, SMB Flat Leads

SMBflat Notch

175°C