页 130 - 二极管 - 整流器 - 单 | 分立半导体产品

零件编号	制造商	描述	封装	库存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
RL107-N-0-2-BP	Micro Commercial Co	DIODE GEN PURP 1KV 1A A-405 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: Axial, Radial Bend Supplier Device Package: A-405 Operating Temperature - Junction: -55°C ~ 150°C	封装: Axial, Radial Bend	库存4,560	1000V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1000V	15pF @ 4V, 1MHz	Through Hole	Axial, Radial Bend	A-405	-55°C ~ 150°C
VS-50SQ060GTR	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 60V 5A AXIAL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 660mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150µA @ 60V Capacitance @ Vr, F: 500pF @ 5V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AR, Axial Supplier Device Package: DO-204AR Operating Temperature - Junction: -55°C ~ 175°C	封装: DO-204AR, Axial	库存7,776	60V	5A	660mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	150µA @ 60V	500pF @ 5V, 1MHz	Through Hole	DO-204AR, Axial	DO-204AR	-55°C ~ 175°C
SB030-E3/53	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY .6A 30V AXIAL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 600mA Voltage - Forward (Vf) (Max) @ If: 550mV @ 600mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 30V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: MPG06, Axial Supplier Device Package: MPG06 Operating Temperature - Junction: -65°C ~ 125°C	封装: MPG06, Axial	库存5,008	30V	600mA	550mV @ 600mA	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Through Hole	MPG06, Axial	MPG06	-65°C ~ 125°C
VS-30WQ06FNTRPBF	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 60V 3.5A DPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 3.5A Voltage - Forward (Vf) (Max) @ If: 610mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2mA @ 60V Capacitance @ Vr, F: 145pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252AA) Operating Temperature - Junction: -40°C ~ 150°C	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存26,448	60V	3.5A	610mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	2mA @ 60V	145pF @ 5V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252AA)	-40°C ~ 150°C
FFPF04S60STU	Fairchild/ON Semiconductor	DIODE GEN PURP 600V 4A TO220F Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 2.6V @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 100µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220F-2L Operating Temperature - Junction: -65°C ~ 150°C	封装: TO-220-2 Full Pack	库存4,400	600V	4A	2.6V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	100µA @ 600V	-	Through Hole	TO-220-2 Full Pack	TO-220F-2L	-65°C ~ 150°C
MMSD71RKT1	ON Semiconductor	DIODE GEN PURP 80V 200MA SOD123 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 500nA @ 80V Capacitance @ Vr, F: 2pF @ 0.5V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 150°C	封装: SOD-123	库存36,000	80V	200mA (DC)	1.2V @ 100mA	Small Signal =< 200mA (Io), Any Speed	4ns	500nA @ 80V	2pF @ 0.5V, 1MHz	Surface Mount	SOD-123	SOD-123	-55°C ~ 150°C
20ETF10S	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 20A D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.31V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400ns Current - Reverse Leakage @ Vr: 100µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -40°C ~ 150°C	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存19,644	1000V	20A	1.31V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	400ns	100µA @ 1000V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-40°C ~ 150°C
R7220605ESOO	Powerex Inc.	DIODE MODULE 600V 500A DO200AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 500A Voltage - Forward (Vf) (Max) @ If: 2.25V @ 1500A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 50mA @ 600V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AB, B-PUK Supplier Device Package: DO-200AB, B-PUK Operating Temperature - Junction: -	封装: DO-200AB, B-PUK	库存7,216	600V	500A	2.25V @ 1500A	Standard Recovery >500ns, > 200mA (Io)	3µs	50mA @ 600V	-	Chassis Mount	DO-200AB, B-PUK	DO-200AB, B-PUK	-
A177P	Powerex Inc.	DIODE GEN PURP 1KV 100A DO205 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 100A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.3µs Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 125°C	封装: DO-205AA, DO-8, Stud	库存3,392	1000V	100A	-	Standard Recovery >500ns, > 200mA (Io)	2.3µs	-	-	Stud Mount	DO-205AA, DO-8, Stud	-	-40°C ~ 125°C
V10PM12HM3_A/H	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 120V 3.9A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 120V Current - Average Rectified (Io): 3.9A Voltage - Forward (Vf) (Max) @ If: 830mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400µA @ 120V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C	封装: TO-277, 3-PowerDFN	库存3,200	120V	3.9A	830mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 120V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-40°C ~ 150°C
FR10G-TP	Micro Commercial Co	DIODE GEN PURP 400V DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-214AB, SMC	库存3,152	400V	10A	1.3V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	10µA @ 400V	-	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 150°C
MURS360-E3/9AT	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -65°C ~ 175°C	封装: DO-214AB, SMC	库存192,000	600V	3A	1.25V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 600V	-	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-65°C ~ 175°C
ES2JAHM2G	TSC America Inc.	DIODE, SUPER FAST, 2A, 600V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-214AC, SMA	库存5,344	600V	2A	1.7V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	20pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
CR1F-100 TR	Central Semiconductor Corp	DIODE GEN PURP 1KV 1.5A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C	封装: DO-204AL, DO-41, Axial	库存3,536	1000V	1.5A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 175°C
S1FLG-M-18	Vishay Semiconductor Diodes Division	DIODE SW 400V DO-219AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8µs Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: 4pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-219AB	库存3,408	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	10µA @ 400V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	DO-219AB (SMF)	-55°C ~ 150°C
SS2PH10-M3/84A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 100V 2A DO220AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 800mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1µA @ 100V Capacitance @ Vr, F: 65pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 175°C	封装: DO-220AA	库存792,468	100V	2A	800mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	1µA @ 100V	65pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 175°C
V4PAN50-M3/I	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 50V 3A DO221BC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 430mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 600µA @ 50V Capacitance @ Vr, F: 480pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221BC, SMA Flat Leads Exposed Pad Supplier Device Package: DO-221BC (SMPA) Operating Temperature - Junction: -40°C ~ 150°C	封装: DO-221BC, SMA Flat Leads Exposed Pad	库存7,536	50V	3A	430mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	600µA @ 50V	480pF @ 4V, 1MHz	Surface Mount	DO-221BC, SMA Flat Leads Exposed Pad	DO-221BC (SMPA)	-40°C ~ 150°C
GL34B-E3/98	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 500MA DO213 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 500mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5µs Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 4pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AA (Glass) Supplier Device Package: DO-213AA (GL34) Operating Temperature - Junction: -65°C ~ 175°C	封装: DO-213AA (Glass)	库存55,920	100V	500mA	1.2V @ 500mA	Standard Recovery >500ns, > 200mA (Io)	1.5µs	5µA @ 100V	4pF @ 4V, 1MHz	Surface Mount	DO-213AA (Glass)	DO-213AA (GL34)	-65°C ~ 175°C
ISL9R460PF2	Fairchild/ON Semiconductor	DIODE GEN PURP 600V 4A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 2.4V @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 22ns Current - Reverse Leakage @ Vr: 100µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220F-2L Operating Temperature - Junction: -55°C ~ 150°C	封装: TO-220-2 Full Pack	库存69,288	600V	4A	2.4V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	22ns	100µA @ 600V	-	Through Hole	TO-220-2 Full Pack	TO-220F-2L	-55°C ~ 150°C
SBR2530	Microchip Technology	DIODE SCHOTTKY 30V 25A DO4 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1 V @ 25 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2 mA @ 30 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 (DO-203AA) Operating Temperature - Junction: -	封装: -	Request a Quote	30 V	25A	1 V @ 25 A	Fast Recovery =< 500ns, > 200mA (Io)	-	2 mA @ 30 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4 (DO-203AA)	-
IDK12G65C5XTMA2	Infineon Technologies	DIODE SIL CARB 650V 12A TO263-2 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 12 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: 360pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-2 Operating Temperature - Junction: -55°C ~ 175°C	封装: -	库存1,584	650 V	12A	1.8 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	-	360pF @ 1V, 1MHz	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	PG-TO263-2	-55°C ~ 175°C
ST3060DJF	SMC Diode Solutions	60V, 30A, PDFNWB56-8L, ULTRA LOW Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 770 mV @ 30 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 6 mA @ 60 V Capacitance @ Vr, F: 1000pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: 8-PDFNWB (5x6) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	库存9,000	60 V	30A	770 mV @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	6 mA @ 60 V	1000pF @ 5V, 1MHz	Surface Mount	8-PowerVDFN	8-PDFNWB (5x6)	-55°C ~ 150°C
GE1003	Harris Corporation	DIODE GEN PURP 150V 1A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 2 µA @ 150 V Capacitance @ Vr, F: 45pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-204AE Supplier Device Package: TO-204AE Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	150 V	1A	950 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	2 µA @ 150 V	45pF @ 4V, 1MHz	Through Hole	TO-204AE	TO-204AE	-65°C ~ 175°C
D1800N36TVFXPSA1	Infineon Technologies	DIODE GEN PURP 3.6KV 1800A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 3600 V Current - Average Rectified (Io): 1800A Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 1500 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 mA @ 3600 V Capacitance @ Vr, F: - Mounting Type: Clamp On Package / Case: DO-200AC, K-PUK Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 160°C	封装: -	Request a Quote	3600 V	1800A	1.32 V @ 1500 A	Standard Recovery >500ns, > 200mA (Io)	-	100 mA @ 3600 V	-	Clamp On	DO-200AC, K-PUK	-	-40°C ~ 160°C
20SQ045TA	SMC Diode Solutions	PLANAR SCHOTTKY DIODE 45V 20A R- Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 45 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: R-6, Axial Supplier Device Package: R-6 Operating Temperature - Junction: -55°C ~ 150°C	封装: -	库存2,700	45 V	20A	550 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 45 V	-	Through Hole	R-6, Axial	R-6	-55°C ~ 150°C
1N5822US-TR-1	Microchip Technology	DIODE SCHOTTKY 40V 3A B SQ-MELF Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, B Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 125°C	封装: -	Request a Quote	40 V	3A	500 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 40 V	-	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 125°C
SS2PH9HM3_A-H	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 29V 2A DO220AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 29 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 800 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 29 V Capacitance @ Vr, F: 65pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 175°C	封装: -	库存20,466	29 V	2A	800 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 µA @ 29 V	65pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 175°C
FS2D-LTP	Micro Commercial Co	DIODE GEN PURP 200V 2A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -50°C ~ 150°C	封装: -	Request a Quote	200 V	2A	-	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	5 µA @ 200 V	50pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-50°C ~ 150°C
JANS1N6621	Microchip Technology	DIODE GEN PURP 400V 2A A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Current - Reverse Leakage @ Vr: 500 nA @ 400 V Capacitance @ Vr, F: 10pF @ 10V, 1MHz Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	400 V	2A	1.4 V @ 1.2 A	Fast Recovery =< 500ns, > 200mA (Io)	45 ns	500 nA @ 400 V	10pF @ 10V, 1MHz	Through Hole	A, Axial	A, Axial	-65°C ~ 175°C
HERA806G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 8A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 80 ns Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: 55pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	封装: -	库存3,000	600 V	8A	1.7 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	80 ns	10 µA @ 600 V	55pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C

RL107-N-0-2-BP

Micro Commercial Co

DIODE GEN PURP 1KV 1A A-405

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: Axial, Radial Bend
Supplier Device Package: A-405
Operating Temperature - Junction: -55°C ~ 150°C

封装: Axial, Radial Bend

库存4,560

1000V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 1000V

15pF @ 4V, 1MHz

Through Hole

Axial, Radial Bend

A-405

-55°C ~ 150°C

VS-50SQ060GTR

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 5A AXIAL

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 660mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 150µA @ 60V
Capacitance @ Vr, F: 500pF @ 5V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AR, Axial
Supplier Device Package: DO-204AR
Operating Temperature - Junction: -55°C ~ 175°C

封装: DO-204AR, Axial

库存7,776

60V

5A

660mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

150µA @ 60V

500pF @ 5V, 1MHz

Through Hole

DO-204AR, Axial

DO-204AR

-55°C ~ 175°C

SB030-E3/53

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY .6A 30V AXIAL

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 600mA
Voltage - Forward (Vf) (Max) @ If: 550mV @ 600mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Supplier Device Package: MPG06
Operating Temperature - Junction: -65°C ~ 125°C

封装: MPG06, Axial

库存5,008

30V

600mA

550mV @ 600mA

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 30V

-

Through Hole

MPG06, Axial

MPG06

-65°C ~ 125°C

VS-30WQ06FNTRPBF

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 3.5A DPAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 3.5A
Voltage - Forward (Vf) (Max) @ If: 610mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2mA @ 60V
Capacitance @ Vr, F: 145pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Operating Temperature - Junction: -40°C ~ 150°C

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存26,448

60V

3.5A

610mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

2mA @ 60V

145pF @ 5V, 1MHz

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

D-PAK (TO-252AA)

-40°C ~ 150°C

FFPF04S60STU

Fairchild/ON Semiconductor

DIODE GEN PURP 600V 4A TO220F

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 2.6V @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 100µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -65°C ~ 150°C

封装: TO-220-2 Full Pack

库存4,400

600V

4A

2.6V @ 4A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

100µA @ 600V

-

Through Hole

TO-220-2 Full Pack

TO-220F-2L

-65°C ~ 150°C

MMSD71RKT1

ON Semiconductor

DIODE GEN PURP 80V 200MA SOD123

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 500nA @ 80V
Capacitance @ Vr, F: 2pF @ 0.5V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C

封装: SOD-123

库存36,000

80V

200mA (DC)

1.2V @ 100mA

Small Signal =< 200mA (Io), Any Speed

4ns

500nA @ 80V

2pF @ 0.5V, 1MHz

Surface Mount

SOD-123

-55°C ~ 150°C

20ETF10S

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 20A D2PAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.31V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400ns
Current - Reverse Leakage @ Vr: 100µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 150°C

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存19,644

1000V

20A

1.31V @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

400ns

100µA @ 1000V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

-40°C ~ 150°C

R7220605ESOO

Powerex Inc.

DIODE MODULE 600V 500A DO200AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 500A
Voltage - Forward (Vf) (Max) @ If: 2.25V @ 1500A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 50mA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: DO-200AB, B-PUK
Supplier Device Package: DO-200AB, B-PUK
Operating Temperature - Junction: -

封装: DO-200AB, B-PUK

库存7,216

600V

500A

2.25V @ 1500A

Standard Recovery >500ns, > 200mA (Io)

3µs

50mA @ 600V

-

Chassis Mount

DO-200AB, B-PUK

-

A177P

Powerex Inc.

DIODE GEN PURP 1KV 100A DO205

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 100A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.3µs
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 125°C

封装: DO-205AA, DO-8, Stud

库存3,392

1000V

100A

-

Standard Recovery >500ns, > 200mA (Io)

2.3µs

-

Stud Mount

DO-205AA, DO-8, Stud

-

-40°C ~ 125°C

V10PM12HM3_A/H

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 120V 3.9A TO277A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 120V
Current - Average Rectified (Io): 3.9A
Voltage - Forward (Vf) (Max) @ If: 830mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 400µA @ 120V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C

封装: TO-277, 3-PowerDFN

库存3,200

120V

3.9A

830mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

400µA @ 120V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-40°C ~ 150°C

FR10G-TP

Micro Commercial Co

DIODE GEN PURP 400V DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-214AB, SMC

库存3,152

400V

10A

1.3V @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

10µA @ 400V

-

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-55°C ~ 150°C

MURS360-E3/9AT

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 3A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-214AB, SMC

库存192,000

600V

3A

1.25V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

10µA @ 600V

-

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-65°C ~ 175°C

ES2JAHM2G

TSC America Inc.

DIODE, SUPER FAST, 2A, 600V, 35N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-214AC, SMA

库存5,344

600V

2A

1.7V @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 600V

20pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

CR1F-100 TR

Central Semiconductor Corp

DIODE GEN PURP 1KV 1.5A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-204AL, DO-41, Axial

库存3,536

1000V

1.5A

1.2V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

500ns

5µA @ 1000V

-

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 175°C

S1FLG-M-18

Vishay Semiconductor Diodes Division

DIODE SW 400V DO-219AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8µs
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-219AB

库存3,408

400V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

1.8µs

10µA @ 400V

4pF @ 4V, 1MHz

Surface Mount

DO-219AB

DO-219AB (SMF)

-55°C ~ 150°C

SS2PH10-M3/84A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 2A DO220AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 800mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1µA @ 100V
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C

封装: DO-220AA

库存792,468

100V

2A

800mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

1µA @ 100V

65pF @ 4V, 1MHz

Surface Mount

DO-220AA

DO-220AA (SMP)

-55°C ~ 175°C

V4PAN50-M3/I

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 50V 3A DO221BC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 430mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 600µA @ 50V
Capacitance @ Vr, F: 480pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 150°C

封装: DO-221BC, SMA Flat Leads Exposed Pad

库存7,536

50V

3A

430mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

600µA @ 50V

480pF @ 4V, 1MHz

Surface Mount

DO-221BC, SMA Flat Leads Exposed Pad

DO-221BC (SMPA)

-40°C ~ 150°C

GL34B-E3/98

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 500MA DO213

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 500mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5µs
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AA (Glass)
Supplier Device Package: DO-213AA (GL34)
Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-213AA (Glass)

库存55,920

100V

500mA

1.2V @ 500mA

Standard Recovery >500ns, > 200mA (Io)

1.5µs

5µA @ 100V

4pF @ 4V, 1MHz

Surface Mount

DO-213AA (Glass)

DO-213AA (GL34)

-65°C ~ 175°C

ISL9R460PF2

Fairchild/ON Semiconductor

DIODE GEN PURP 600V 4A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 2.4V @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22ns
Current - Reverse Leakage @ Vr: 100µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -55°C ~ 150°C

封装: TO-220-2 Full Pack

库存69,288

600V

4A

2.4V @ 4A

Fast Recovery =< 500ns, > 200mA (Io)

22ns

100µA @ 600V

-

Through Hole

TO-220-2 Full Pack

TO-220F-2L

-55°C ~ 150°C

SBR2530

Microchip Technology

DIODE SCHOTTKY 30V 25A DO4

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 25 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2 mA @ 30 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -

封装: -

Request a Quote

30 V

25A

1 V @ 25 A

Fast Recovery =< 500ns, > 200mA (Io)

-

2 mA @ 30 V

-

Stud Mount

DO-203AA, DO-4, Stud

DO-4 (DO-203AA)

-

IDK12G65C5XTMA2

Infineon Technologies

DIODE SIL CARB 650V 12A TO263-2

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 12 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: 360pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

库存1,584

650 V

12A

1.8 V @ 12 A

No Recovery Time > 500mA (Io)

0 ns

-

360pF @ 1V, 1MHz

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

PG-TO263-2

-55°C ~ 175°C

ST3060DJF

SMC Diode Solutions

60V, 30A, PDFNWB56-8L, ULTRA LOW

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 30 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 6 mA @ 60 V
Capacitance @ Vr, F: 1000pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-PDFNWB (5x6)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

库存9,000

60 V

30A

770 mV @ 30 A

Fast Recovery =< 500ns, > 200mA (Io)

-

6 mA @ 60 V

1000pF @ 5V, 1MHz

Surface Mount

8-PowerVDFN

8-PDFNWB (5x6)

-55°C ~ 150°C

GE1003

Harris Corporation

DIODE GEN PURP 150V 1A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 2 µA @ 150 V
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-204AE
Supplier Device Package: TO-204AE
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

Request a Quote

150 V

1A

950 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

2 µA @ 150 V

45pF @ 4V, 1MHz

Through Hole

TO-204AE

-65°C ~ 175°C

D1800N36TVFXPSA1

Infineon Technologies

DIODE GEN PURP 3.6KV 1800A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 3600 V
Current - Average Rectified (Io): 1800A
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 1500 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 mA @ 3600 V
Capacitance @ Vr, F: -
Mounting Type: Clamp On
Package / Case: DO-200AC, K-PUK
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 160°C

封装: -

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3600 V

1800A

1.32 V @ 1500 A

Standard Recovery >500ns, > 200mA (Io)

-

100 mA @ 3600 V

-

Clamp On

DO-200AC, K-PUK

-

-40°C ~ 160°C

20SQ045TA

SMC Diode Solutions

PLANAR SCHOTTKY DIODE 45V 20A R-

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 20 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: R-6, Axial
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

库存2,700

45 V

20A

550 mV @ 20 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 45 V

-

Through Hole

R-6, Axial

R-6

-55°C ~ 150°C

1N5822US-TR-1

Microchip Technology

DIODE SCHOTTKY 40V 3A B SQ-MELF

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 125°C

封装: -

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40 V

3A

500 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 40 V

-

Surface Mount

SQ-MELF, B

B, SQ-MELF

-65°C ~ 125°C

SS2PH9HM3_A-H

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 29V 2A DO220AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 29 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 µA @ 29 V
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

库存20,466

29 V

2A

800 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

1 µA @ 29 V

65pF @ 4V, 1MHz

Surface Mount

DO-220AA

DO-220AA (SMP)

-55°C ~ 175°C

FS2D-LTP

Micro Commercial Co

DIODE GEN PURP 200V 2A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -50°C ~ 150°C

封装: -

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200 V

2A

-

Fast Recovery =< 500ns, > 200mA (Io)

150 ns

5 µA @ 200 V

50pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-50°C ~ 150°C

JANS1N6621

Microchip Technology

DIODE GEN PURP 400V 2A A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

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400 V

2A

1.4 V @ 1.2 A

Fast Recovery =< 500ns, > 200mA (Io)

45 ns

500 nA @ 400 V

10pF @ 10V, 1MHz

Through Hole

A, Axial

-65°C ~ 175°C

HERA806G

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 8A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

库存3,000

600 V

8A

1.7 V @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

80 ns

10 µA @ 600 V

55pF @ 4V, 1MHz

Through Hole

TO-220-2

TO-220AC

-55°C ~ 150°C